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Effect of copper ions implantation on corrosion behavior of zircaloy-4 in 1 M H2SO4

机译:铜离子注入对Zircaloy-4在1 M H2SO4中腐蚀行为的影响

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in order to study the effect of copper ion implantation on the aqueous corrosion behavior, samples of zircaloy-4 were implanted with copper ions with fluences ranging from 1 x 10(16) to 1 x 10(17) ions/cm(2), using a metal vapor vacuum arc source (MEVVA) operated at an extraction voltage of 40 W The valence states and depth distributions of elements in the surface layer of the samples were analyzed by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES), respectively. Glancing angle X-ray diffraction (GAXRD) was employed to examine the phase transformation due to the copper ion implantation. The potentiodynamic polarization technique was employed to evaluate the aqueous corrosion resistance of implanted zircaloy-4 in a 1 M H2SO4 solution. It was found that a significant improvement was achieved in the aqueous corrosion resistance of zircaloy-4 implanted with copper ions when the fluence is smaller than 5 x 10(16) ions/cm(2). The corrosion resistance of implanted samples declined with increasing the fluence. Finally, the mechanism of the corrosion behavior of copper-implanted zircaloy-4 was discussed. (c) 2005 Elsevier B.V. All rights reserved.
机译:为了研究铜离子注入对水腐蚀行为的影响,在Zircaloy-4样品中注入了通量范围为1 x 10(16)至1 x 10(17)离子/ cm(2)的铜离子,使用提取电压为40 W的金属蒸气真空电弧源(MEVVA),通过X射线光电子能谱(XPS)和俄歇电子能谱(AES)分析样品表面层中元素的价态和深度分布), 分别。使用掠角X射线衍射(GAXRD)来检查由于铜离子注入而引起的相变。电位动力极化技术用于评估在1 M H2SO4溶液中注入的Zircaloy-4的耐水腐蚀性能。发现当注量小于5 x 10(16)离子/ cm(2)时,植入铜离子的Zircaloy-4的耐水腐蚀性得到了显着改善。注入样品的耐腐蚀性随通量的增加而下降。最后,讨论了注入铜的Zircaloy-4腐蚀行为的机理。 (c)2005 Elsevier B.V.保留所有权利。

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