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首页> 外文期刊>Applied Surface Science >Raman and photoluminescence study of ion beam irradiated porous silicon: a case for the astrophysical extended red emission?
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Raman and photoluminescence study of ion beam irradiated porous silicon: a case for the astrophysical extended red emission?

机译：离子束辐照多孔硅的拉曼光谱和光致发光研究：天体扩展红色发射的情况？

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We have measured photoluminescence (PL) and Raman spectra of porous silicon (PS) thin films subjected to irradiation with 30 keV He~+ ion beams. Fluence has been changed between 10~(14) and 10~(16) ions/cm~2. The results show a decrease of the photoluminescence intensity by increasing the ion fluence, probably due to the formation of induced non-radiative recombination centres. The increase of defects density and the partial amorphization of the samples have been studied through Raman spectroscopy and a comparison with the induced damage in single-crystalline silicon has been considered. The characteristic PL wavelength (600-800 nm) supports the hypothesis that silicon nanostructures are an attractive carrier for the so called "Extended Red Emission" (ERE) observed in many astronomical objects. However, the possibility to tune the PL quantum efficiency by ion irradiation indicates that silicon nanostructures in space could loss their photoluminescence capability in those environments where cosmic ion bombardment plays a relevant role.
机译：我们已经测量了用30 keV He〜+离子束辐照的多孔硅（PS）薄膜的光致发光（PL）和拉曼光谱。通量已在10〜（14）和10〜（16）离子/ cm〜2之间变化。结果表明，通过增加离子通量，可以降低光致发光强度，这可能是由于诱导了非辐射复合中心的形成。通过拉曼光谱研究了样品的缺陷密度的增加和部分非晶化，并考虑了与单晶硅中的诱导损伤的比较。 PL的特征波长（600-800 nm）支持以下假设：硅纳米结构是在许多天文物体中观察到的所谓“扩展红色发射”（ERE）的有吸引力的载体。然而，通过离子辐射调节PL量子效率的可能性表明，在宇宙离子轰击起相关作用的那些环境中，空间中的硅纳米结构可能会失去其光致发光能力。

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