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首页> 外文期刊>Applied Surface Science >Effect of end-substitution of hexyl chains on the growth and electrical properties of quaterthiophene thin films
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Effect of end-substitution of hexyl chains on the growth and electrical properties of quaterthiophene thin films

机译：己基链末端取代对四噻吩薄膜生长和电学性能的影响

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We present here a detailed study of the growth process of quaterthiophene (4T) based thin films, especially the influence of end-substitution of alkyl chains on the film formation. A radical change in the growth mechanism introduced by the side chains could be observed by atomic force microscopy (AFM) measurements. While the unsubstituted quaterthiophene shows a typical island growth, an almost perfect layer-to-layer growth was found for the α,ω-dihexylquaterthiophene (DH4T). The alteration in the growth mode leads to differences of one order in the grain size going from 4T to DH4T, which results finally in an enhancement of the mobility measured in the field-effect transistor (FET) of the same order. The results reveal a change of the growth process induced by molecular engineering leading to an improvement of the film morphology towards larger grain sizes and thus to an enhancement of the electronic properties of the organic semiconductor thin films.
机译：我们在此介绍基于四噻吩（4T）薄膜的生长过程的详细研究，尤其是烷基链的末端取代对成膜的影响。由侧链引入的生长机理的根本变化可以通过原子力显微镜（AFM）测量来观察。尽管未取代的四噻吩具有典型的岛状生长，但发现α，ω-二己基四噻吩（DH4T）的层到层生长几乎完美。生长模式的改变导致晶粒尺寸从4T到DH4T出现一个数量级的差异，最终导致以相同数量级的场效应晶体管（FET）测得的迁移率提高。结果表明由分子工程引起的生长过程的变化导致膜形态向更大的晶粒尺寸的改善，从而导致有机半导体薄膜的电子性能的增强。

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