• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Applied Surface Science >Compositional inhomogeneities in type-Ⅰ and type-Ⅱ superlattices for GaAsSbN-based solar cells: Effect of thermal annealing
【24h】

Compositional inhomogeneities in type-Ⅰ and type-Ⅱ superlattices for GaAsSbN-based solar cells: Effect of thermal annealing

机译：GaAsSbN基太阳能电池Ⅰ型和Ⅱ型超晶格的组成不均匀性：热退火的影响

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

GaAsSbN alloys is recognized as an effective candidate to incorporate in multijunction solar cell applications due to its advantages of being grown lattice-matched to GaAs and its capability to achieve bandgap around 1.0 eV. Recently, the use of superlattice (SL) structures that permit type-II (GaAsSb/GaAsN) and type-I (GaAsSbN/GaAs) alignments showed a strongly heightened luminescence and a significant EQE compared to their thicker quaternary bulk counterparts. In this work, the correlation between the compositional distribution and its optical properties in both SL structures before and after RTA treatment is analyzed. Firstly, while N is confined following the nominal design, Sb presents a strong segregation to the upper layers achieving similar compositional profiles along the growth direction even after the RTA. However, the SL type-II approach presents a higher interface quality and a much lower trend to cluster formation than SL type-I. Secondly, RTA gives place to an improvement of the interface roughness, together to a decrease of the area associated to clusters in both structures. The blueshift and the improvement of the PL intensity induced by annealing in both samples is more correlated to the decomposition of nitrogen pairs to isolated substitutional nitrogen than to the dissolution of Sb inhomogeneities. A different distribution of new substitutional N atoms around Sb clusters could explain the differences in the PL improvement of both SLs during the annealing. SL type-II approach is the best design to minimize cluster formation and to obtain more abrupt interfaces and mainly describe the optical enhancement compared to SL type-I structures.
机译：由于GaAsSbN合金具有与GaAs晶格匹配的优势，并且能够实现1.0 eV左右的带隙，因此被认为是多结太阳能电池应用中有效的候选材料。最近，使用允许II型（GaAsSb / GaAsN）和I型（GaAsSbN / GaAs）排列的超晶格（SL）结构，与较厚的四元本体相比，显示出强烈增强的发光和显着的EQE。在这项工作中，分析了RTA处理前后两种SL结构中的成分分布及其光学性能之间的相关性。首先，尽管N遵循标称设计，但Sb仍对上层产生强烈的偏析，即使在RTA之后，也沿生长方向实现了相似的成分分布。但是，与SL型I相比，II型SL方法具有更高的界面质量和更低的成簇趋势。其次，RTA可以改善界面粗糙度，同时可以减少与两种结构中的团簇相关的面积。在两个样品中，退火引起的蓝移和PL强度的改善与氮对分解为孤立的取代氮的相关性更大，而与Sb不均匀性的溶解更相关。 Sb团簇周围新取代N原子的不同分布可以解释退火过程中两个SL的PL改善的差异。 SL型II方法是最佳的设计，可最大程度地减少簇形成并获得更陡峭的界面，并且主要描述与SL型I结构相比的光学增强。

著录项

  • 来源
    《Applied Surface Science》 |2018年第30期|1-8|共8页
  • 作者

    Braza V; Reyes D. F.; Gonzalo A.; Utrilla A. D.; Ulloa J. M.; Flores S.; Ben T.; Gonzalez D.;

  • 作者单位

    Univ Cadiz, Univ Res Inst Electron Microscopy & Mat, IMEYMAT, Puerto Real 11510, Cadiz, Spain;

    Univ Cadiz, Univ Res Inst Electron Microscopy & Mat, IMEYMAT, Puerto Real 11510, Cadiz, Spain;

    Univ Politecn Madrid, Inst Syst Based Optoelect & Microtechnol ISOM, Avda Complutense 30, E-28040 Madrid, Spain;

    Univ Politecn Madrid, Inst Syst Based Optoelect & Microtechnol ISOM, Avda Complutense 30, E-28040 Madrid, Spain;

    Univ Politecn Madrid, Inst Syst Based Optoelect & Microtechnol ISOM, Avda Complutense 30, E-28040 Madrid, Spain;

    Univ Cadiz, Univ Res Inst Electron Microscopy & Mat, IMEYMAT, Puerto Real 11510, Cadiz, Spain;

    Univ Cadiz, Univ Res Inst Electron Microscopy & Mat, IMEYMAT, Puerto Real 11510, Cadiz, Spain;

    Univ Cadiz, Univ Res Inst Electron Microscopy & Mat, IMEYMAT, Puerto Real 11510, Cadiz, Spain;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Superlattice structures; Compositional distribution; TEM;

    机译：超晶格结构;组成分布;TEM;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号