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首页> 外文期刊>Child Neuropsychology >There are Multiple Contributors to the Verbal Short-Term Memory Deficit in Children with Developmental Reading Disabilities
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There are Multiple Contributors to the Verbal Short-Term Memory Deficit in Children with Developmental Reading Disabilities

机译：发育性阅读障碍儿童的言语短期记忆缺陷有多种原因

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Prior research has put forth at least four possible contributors to the verbal short-term memory (VSTM) deficit in children with developmental reading disabilities (RD): poor phonological awareness that affects phonological coding into VSTM, a less effective phonological store, slow articulation rate, and fewer/poorer quality long-term memory (LTM) representations. This project is among the first to test the four suppositions in one study. Participants included 18 children with RD and 18 controls. VSTM was assessed using Baddeley's model of the phonological loop. Findings suggest all four suppositions are correct, depending upon the type of material utilized. Children with RD performed comparably to controls in VSTM for common words but worse for less frequent words and nonwords. Furthermore, only articulation rate predicted VSTM for common words, whereas Verbal IQ and articulation rate predicted VSTM for less frequent words, and phonological awareness and articulation rate predicted VSTM for nonwords. Overall, findings suggest that the mechanism(s) used to code and store items by their meaning is intact in RD, and the deficit in VSTM for less frequent words may be a result of fewer/poorer quality LTM representations for these words. In contrast, phonological awareness and the phonological store are impaired, affecting VSTM for items that are coded phonetically. Slow articulation rate likely affects VSTM for most material when present. When assessing reading performance, VSTM predicted decoding skill but not word identification after controlling Verbal IQ and phonological awareness. Thus, VSTM likely contributes to reading ability when words are novel and must be decoded.
机译：先前的研究至少对发育性阅读障碍（RD）儿童的言语短期记忆（VSTM）缺陷提出了四种可能的贡献：不良的语音意识，影响语音编码到VSTM中，音效库的效果较差，发音速度较慢，并且长期记忆（LTM）表示的质量较少/较差。该项目是第一个在一项研究中测试这四个假设的项目。参加者包括18名RD儿童和18名对照。使用Baddeley的语音回路模型评估了VSTM。研究结果表明所有四个假设都是正确的，具体取决于所用材料的类型。在普通单词中，RD儿童的表现与VSTM中的控件相当，而在不常用单词和非单词中，RD儿童表现较差。此外，只有发音率预测了普通单词的VSTM，而口头智商和发音率则预测了频率较低的单词的VSTM，而语音意识和发音率则预测了非单词的VSTM。总体而言，研究结果表明，用于按其含义编码和存储项目的机制在RD中是完整的，而频率较低的单词在VSTM中的不足可能是这些单词的LTM表示质量较低/较差的结果。相反，语音意识和语音存储会受到影响，从而影响以语音编码的项目的VSTM。如果存在，大多数材料的缓慢关节运动速率可能会影响VSTM。在评估阅读性能时，VSTM在控制语言智商和语音意识之后预测了解码能力，但没有单词识别能力。因此，当单词新颖且必须解码时，VSTM可能有助于阅读能力。

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