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首页> 外文期刊>Chinese Journal of Electronics >Current Spreading Effects in Vertical GaN-Based Light-Emitting Diode on Si(111) Substrate
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Current Spreading Effects in Vertical GaN-Based Light-Emitting Diode on Si(111) Substrate

机译：Si（111）衬底上基于垂直GaN的发光二极管中的电流扩散效应

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摘要

The optimal design of GaN-based Light-emitting diode (LED) is important for its reliability. In this work, a new three-Dimensional (3D) circuit model with a resistor network is developed to study the current distribution in the active layer of vertical conducting GaN-based LED grown on Si(111) substrate with different structures and electrode patterns. It consists of resistance of Transparent conductive layer (TCL), resistance of epitaxial layer, intrinsic diodes presenting the active layer, and AlN/Si junction as which the multilayer of AlN/Si is assumed. Simulations results of current distribution in active layers of two kinds of LED structures show that current distribution uniformity is greatly affected by the electrode pattern and the LED structure. Furthermore, the experimentally measured light emission uniformity agrees well with simulation results. The electrical and optical characteristics of LED are obviously affected by the current distribution uniformity.
机译：GaN基发光二极管（LED）的优化设计对其可靠性至关重要。在这项工作中，开发了一种带有电阻器网络的新的三维（3D）电路模型，以研究生长在具有不同结构和电极图案的Si（111）衬底上的垂直导电GaN基LED的有源层中的电流分布。它由透明导电层（TCL）的电阻，外延层的电阻，呈现有源层的本征二极管和AlN / Si结组成，并假定AlN / Si为多层。两种LED结构的有源层中电流分布的仿真结果表明，电流分布的均匀性受电极图案和LED结构的影响很大。此外，实验测量的发光均匀性与仿真结果非常吻合。 LED的电气和光学特性显然受电流分布均匀性的影响。

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