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Comparative Methodical Assessment of Established MOSFET Threshold Voltage Extraction Methods at 10-nm Technology Node

机译：在10nm技术节点建立的MOSFET阈值电压提取方法的比较方法学评估

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摘要

Threshold voltage (V_(TH)) is the most evocative aspect of MOSFET operation. It is the crucial device constraint to model on-off transition characteristics. Precise V_(TH) value of the device is extracted and evaluated by several estimation techniques. However, these assessed values of V_(TH) diverge from the exact values due to various short channel effects (SCEs) and non-idealities present in the device. Numerous prevalent V_(TH) extraction methods are discussed. All the results are verified by extensive 2-D TCAD simulation and confirmed through analytical results at 10-nm technology node. Aim of this research paper is to explore and present a comparative study of largely applied threshold extraction methods for bulk driven nano-MOSFETs especially at 10-nm technology node along with various sub 45-nm technology nodes. Application of the threshold extraction methods to implement noise analysis is briefly presented to infer the most appropriate extraction method at nanometer technology nodes.
机译：阈值电压（V_（TH））是MOSFET工作中最令人回味的方面。建模开关过渡特性是至关重要的设备约束。通过几种估算技术提取并评估设备的精确V_（TH）值。但是，由于设备中存在各种短通道效应（SCE）和非理想性，V_（TH）的这些评估值与确切值有所不同。讨论了许多流行的V_（TH）提取方法。所有结果均通过广泛的2D TCAD仿真进行了验证，并通过10纳米技术节点的分析结果得到了证实。本研究的目的是探索并提供对批量驱动的纳米MOSFET广泛应用的阈值提取方法的比较研究，尤其是在10nm技术节点以及各种45nm以下技术节点上。简要介绍了阈值提取方法在进行噪声分析中的应用，以推断在纳米技术节点上最合适的提取方法。

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