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Accurate Extraction of Effective Gate Resistance in RF MOSFET

机译：准确提取RF MOSFET中的有效栅极电阻

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This paper describes the gate electrode resistance of MOSFET and non-quasi-static (NQS) effect for RF operation. The vertical current paths between the silicide layer and poly-silicon are considered in the gate electrode. The vertical current paths are not effective in long-channel devices, but become more significant in short-channel devices. The gate resistance including vertical current paths can reproduce the practical RF characteristics well. By careful separation of the above gate electrode resistance and the NQS effect, the small-signal gate-source admittance can be analyzed with 130-nm CMOS process. Elmore constant (k) of the NQS gate-source resistance is about five for long-channel devices, while it decreases down to about three for short-channel devices.
机译：本文介绍了MOSFET的栅极电阻和射频操作的非准静态（NQS）效应。在栅电极中考虑了硅化物层和多晶硅之间的垂直电流路径。垂直电流路径在长通道设备中无效，但在短通道设备中则更为重要。包括垂直电流路径在内的栅极电阻可以很好地再现实际的RF特性。通过仔细分离上述栅极电阻和NQS效应，可以使用130 nm CMOS工艺分析小信号栅源导纳。 NQS栅极-源极电阻的Elmore常数（k）对于长通道器件大约为5，而对于短通道器件则减小到大约3。

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