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首页> 外文期刊>IEEE Transactions on Components and Packaging Technologies >Thermal Metrology of Silicon Microstructures Using Raman Spectroscopy
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Thermal Metrology of Silicon Microstructures Using Raman Spectroscopy

机译：硅微结构的热计量的拉曼光谱

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摘要

Thermal metrology of an electrically active silicon heated atomic force microscope cantilever and doped polysilicon microbeams was performed using Raman spectroscopy. The temperature dependence of the Stokes Raman peak location and the Stokes to anti-Stokes intensity ratio calibrated the measurements, and it was possible to assess both temperature and thermal stress behavior with resolution near 1mum. The devices can exceed 400degC with the required power depending upon thermal boundary conditions. Comparing the Stokes shift method to the intensity ratio technique, non-negligible errors in devices with mechanically fixed boundary conditions compared to freely standing structures arise due to thermally induced stress. Experimental values were compared with a finite element model, and were within 9% of the thermal response and 5% of the electrical response across the entire range measured
机译：使用拉曼光谱进行电活性硅加热的原子力显微镜悬臂和掺杂的多晶硅微束的热计量。斯托克斯拉曼峰位置的温度依赖性以及斯托克斯与反斯托克斯的强度比对测量进行了校准，并且可以以接近1mum的分辨率评估温度和热应力行为。根据热边界条件，设备可能会以所需功率超过400℃。将斯托克斯位移法与强度比技术进行比较，由于热诱导应力，与自由站立的结构相比，在具有机械固定边界条件的设备中出现了不可忽略的误差。将实验值与有限元模型进行比较，并且在整个测量范围内，热响应在9％以内，电响应在5％以内

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