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Synthesis of CIS Nanoink and Its Absorber Layer without Selenization

机译:不含硒的CIS纳米墨水及其吸收层的合成

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Highly crystalline CIS nanoink was synthesized using highly efficient microwave route. Thin films of CIS were fabricated using the developed ink by drop casting method. XRD pattern of CIS thin films indicates that a chalcopyrite phase with good crystallinity can be obtained using developed ink and that the composition of precursor ink can be transferred directly to the thin film without change in the stoichiometry. The developed ink alleviates the need of organic binders/dispersant and high temperature selenization using highly toxic H2Se gas (or Na2Se as a Se source) after deposition of thin film absorber layer. UV-VIS-NIR absorption analysis indicates that CIS thin film has a band gap of around 1.18 eV.
机译:高结晶度的CIS纳米墨水是使用高效的微波途径合成的。 CIS薄膜是通过滴铸法用显影的油墨制成的。 CIS薄膜的XRD图谱表明,使用显影的油墨可以得到具有良好结晶度的黄铜矿相,并且可以将前体油墨的成分直接转移到薄膜上,而无需改变化学计量。在沉积薄膜吸收层之后,使用高毒性的H2Se气体(或Na2Se作为Se源),开发出的墨水减轻了对有机粘合剂/分散剂和高温硒化的需求。 UV-VIS-NIR吸收分析表明,CIS薄膜的带隙约为1.18 eV。

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