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首页> 外文期刊>Advances in materials science and engineering >Preparation of Aligned ZnO Nanorod Arrays on Sn-Doped ZnO Thin Films by Sonicated Sol-Gel Immersion Fabricated for Dye-Sensitized Solar Cell
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Preparation of Aligned ZnO Nanorod Arrays on Sn-Doped ZnO Thin Films by Sonicated Sol-Gel Immersion Fabricated for Dye-Sensitized Solar Cell

机译：染料敏化太阳能电池的超声溶胶-凝胶浸渍法在掺锡ZnO薄膜上制备对准的ZnO纳米棒阵列

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摘要

Aligned ZnO Nanorod arrays are deposited on the Sn-doped ZnO thin film via sonicated sol-gel immersion method. The structural, optical, and electrical properties of the Sn-doped ZnO thin films were investigated. Results show that the Sn-doped ZnO thin films with small grain size (~20 nm), high average transmittance (96%) in visible region, and good resistivity7.7 × 102 Ω·cm are obtained for 2 at.% Sn doping concentration. The aligned ZnO nanorod arrays with large surface area were also obtained for 2 at.% Sn-doped ZnO thin film. They were grown on sol-gel derived Sn-doped ZnO thin film, which acts as a seed layer, via sonicated sol-gel immersion method. The grown aligned ZnO nanorod arrays show high transmittance at visible region. The fabricated dye-sensitised solar cell based on the 2.0 at.% Sn-doped ZnO thin film with aligned ZnO nanorod arrays exhibits improved current density, open-circuit voltage, fill factor, and conversion efficiency compared with the undoped ZnO and 1 at.% Sn-doped ZnO thin films.
机译：通过超声溶胶-凝胶浸没法将对准的ZnO纳米棒阵列沉积在Sn掺杂的ZnO薄膜上。研究了掺Sn的ZnO薄膜的结构，光学和电学性质。结果表明，对于2 at。％的Sn掺杂，获得的Sn掺杂的ZnO薄膜具有较小的晶粒尺寸（〜20 nm），在可见光区域的平均透射率高（96％）和良好的电阻率7.7×102Ω·cm浓度。对于2at。％的Sn掺杂的ZnO薄膜，也获得了具有大表面积的对准的ZnO纳米棒阵列。它们通过超声溶胶-凝胶浸没法在溶胶-凝胶衍生的掺Sn的ZnO薄膜上生长，该薄膜充当种子层。生长的对准的ZnO纳米棒阵列在可见光区域显示出高透射率。与未掺杂的ZnO和1 at相比，基于具有2.0 at。％的Sn掺杂的ZnO薄膜和对准的ZnO纳米棒阵列的染料敏化太阳能电池具有更高的电流密度，开路电压，填充因子和转换效率。 ％Sn掺杂的ZnO薄膜。

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