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Rapid preparations and thermoelectric properties of bulk skutterudites with in situ nanostructures

机译:具有原位纳米结构的块状方钴矿的快速制备和热电性能

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In this paper, Ge and Te co-doped skutterudites Co4Sb11Ge1-xTex were synthesized via two rapid preparation methods, melt quenching-spark plasma sintering (MQ-SPS) and high pressure-spark plasma sintering (HP-SPS). Bulk skutterudites can be synthesized in as little as 6 hours by MQ-SPS and under 1 hour by HP-SPS, as shown by both scanning electron microscopy and x-ray diffraction. This is a dramatic improvement over traditional methods requiring a full week of processing. The Seebeck coefficient, electrical conductivity and thermal conductivity across a temperature range of 300 to 800 K where measured. This work shows that the processing by HP-SPS significantly decreases thermal and lattice thermal conductivities, while increasing the temperature-dependent Seebeck maximum. Consequently, the HP-Co4Sb11Ge1-xTex samples show a higher dimensionless figure of merit compared with that of MQ-Co4Sb11Ge1-xTex samples throughout the measured temperature range.
机译:本文将Ge和Te共掺杂的方钴矿Co 4 Sb 11 Ge 1-x Te x 通过两种快速制备方法合成:熔融淬火-火花等离子体烧结(MQ-SPS)和高压-火花等离子体烧结(HP-SPS)。 MQ-SPS可以在短短6个小时内合成散装方钴矿,HP-SPS可以在1小时内合成散装方钴矿,如扫描电子显微镜和X射线衍射所示。与需要整整一周的处理的传统方法相比,这是一个巨大的改进。在300至800 K的温度范围内进行测量的塞贝克系数,电导率和热导率。这项工作表明,HP-SPS的处理显着降低了热和晶格的热导率,同时增加了与温度有关的塞贝克最大值。因此,HP-Co 4 Sb 11 Ge 1-x Te x 样品显示出较高的无量纲图。在整个测量温度下与MQ-Co 4 Sb 11 Ge 1-x Te x 样品相比的优点范围。

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