Macroporous Silicon Formation on Low-resistivity p-type c-Si Substrate by Metal-catalyzed Electrochemical Etching

Zhaochen Li; Lei Zhao; Hongwei Diao; Chunlan Zhou; Hailing Li; Wenjing Wang

首页> 外文期刊>International Journal of Electrochemical Science >Macroporous Silicon Formation on Low-resistivity p-type c-Si Substrate by Metal-catalyzed Electrochemical Etching

【24h】

Macroporous Silicon Formation on Low-resistivity p-type c-Si Substrate by Metal-catalyzed Electrochemical Etching

机译：金属催化电化学刻蚀在低电阻率p型c-Si衬底上形成大孔硅

获取原文

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Macroporous silicon with large aperture size was fabricated on p-type c-Si substrate with the resistivityof about 0.1-3 ohmcm by metalatalyzed electrochemical etching (MCECE). Firstly, Agnanoparticle catalyst was fabricated on c-Si by immersing the substrate into an aqueous solution of HFand AgNO3. Electrochemical etching was then performed in a HF-H2O2 solution. The synergetic effectof the Ag catalyst and the external applied electric field successfully facilitated the formation ofmacroporous silicon with large aperture size, which could not be obtained by single metalatalyzedelectroless etching (MCEE) or electrochemical etching (ECE). An etching model was proposed toillustrate the MCECE mechanism.

机译：通过金属催化电化学刻蚀（MCECE），在电阻率约为0.1-3 ohmcm的p型c-Si衬底上制备了大孔径大孔硅。首先，通过将衬底浸入HF和AgNO3的水溶液中，在c-Si上制备Agnanoparticle催化剂。然后在HF-H2O2溶液中进行电化学蚀刻。 Ag催化剂与外加电场的协同作用成功地促进了大孔径硅的形成，这是单金属催化化学蚀刻（MCEE）或电化学蚀刻（ECE）无法实现的。提出了刻蚀模型来说明MCECE机制。

著录项

来源
《International Journal of Electrochemical Science》 |2013年第1期|共7页
作者
Zhaochen Li; Lei Zhao; Hongwei Diao; Chunlan Zhou; Hailing Li; Wenjing Wang;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种
中图分类化学;
关键词

相似文献

外文文献
中文文献
专利

1. Preparation of Large-Aperture Macroporous Silicon with Controllable Pore Tip Angle on Low-Resistivity p-Type c-Si Substrate by Metal-Catalyzed Electrochemical Etching [J] . Zhaochen Li, Hongwei Diao, Hailing Li ECS Journal of Solid State Science and Technology . 2013,第4期

机译：用金属催化电化学蚀刻在低电阻率P型C-Si基板上具有可控孔尖角的大孔径大孔硅的制备
2. Combinational Approach of Electrochemical Etching and Metal-Assisted Chemical Etching for p-Type Silicon Wire Formation [J] . Jang HS, Choi HJ, Oh BY, Electrochemical and solid-state letters . 2011,第1期

机译：p型硅线形成的电化学蚀刻与金属辅助化学蚀刻的组合方法
3. Thin film silicon substrate formation using electrochemical anodic etching method [J] . Kwon J.-H., Lee S.-H., Ju B.-K. Surface Engineering . 2009,第8期

机译：利用电化学阳极蚀刻法形成薄膜硅基板
4. Optimization Study on Preparation of Macroporous Silicon on P-type Silicon Substrate by Electrochemical Etching [C] . Weiying Ou, Lei Zhao, Zhaochen Li International Conference on Key Engineering Materials . 2012

机译：电化学蚀刻对P型硅衬底上大孔硅的制备优化研究
5. Formation and characterization of columnar porous silicon carbide fabricated by photo-electrochemical etching. [D] . Ke, Yue. 2007

机译：光电化学刻蚀制备的柱状多孔碳化硅的形成与表征。
6. Continuous-flow Mass Production of Silicon Nanowires via Substrate-Enhanced Metal-Catalyzed Electroless Etching of Silicon with Dissolved Oxygen as an Oxidant [O] . Ya Hu, Kui-Qing Peng, Lin Liu, -1

机译：通过以溶解氧为氧化剂的底物增强金属催化的硅化学刻蚀连续生产硅纳米线
7. Continuous-flow Mass Production of Silicon Nanowires via Substrate-Enhanced Metal-Catalyzed Electroless Etching of Silicon with Dissolved Oxygen as an Oxidant [O] . Ya Hu, Kui-Qing Peng, Lin Liu, 2014

机译：通过基板增强的金属催化的硅催化蚀刻硅纳米线的连续流量批量生产，其中硅具有溶解氧作为氧化剂

Macroporous Silicon Formation on Low-resistivity p-type c-Si Substrate by Metal-catalyzed Electrochemical Etching

摘要

著录项

相似文献

相关主题

期刊订阅