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Integration of functional complex oxide nanomaterials on silicon

机译:功能复合氧化物纳米材料在硅上的集成

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The combination of standard wafer-scale semiconductor processing with the properties of functional oxides opens up to innovative and more efficient devices with high value applications that can be produced at large scale. This review uncovers the main strategies that are successfully used to monolithically integrate functional complex oxide thin films and nanostructures on silicon: the chemical solution deposition approach (CSD) and the advanced physical vapor deposition techniques such as oxide molecular beam epitaxy (MBE). Special emphasis will be placed on complex oxide nanostructures epitaxially grown on silicon using the combination of CSD and MBE. Several examples will be exposed, with a particular stress on the control of interfaces and crystallization mechanisms on epitaxial perovskite oxide thin films, nanostructured quartz thin films, and octahedral molecular sieve nanowires. This review enlightens on the potential of complex oxide nanostructures and the combination of both chemical and physical elaboration techniques for novel oxide-based integrated devices.
机译:标准晶圆级半导体工艺与功能性氧化物的特性相结合,为具有大规模应用的高价值应用提供了创新,更高效的设备。这篇综述揭示了成功用于在硅上单片集成功能性复合氧化物薄膜和纳米结构的主要策略:化学溶液沉积方法(CSD)和先进的物理气相沉积技术,例如氧化物分子束外延(MBE)。将特别强调使用CSD和MBE的组合在硅上外延生长的复杂氧化物纳米结构。将公开几个示例,其中特别强调外延钙钛矿氧化物薄膜,纳米结构石英薄膜和八面体分子筛纳米线的界面和结晶机理的控制。这篇综述启发了复合氧化物纳米结构的潜力以及化学和物理加工技术的结合对新型基于氧化物的集成器件的潜力。

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