Effects of Process Variations in a HCMOS IC using a Monte Carlo SPICE Simulation

Widianto Widianto; Lailis Syafaah; Nurhadi Nurhadi

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Effects of Process Variations in a HCMOS IC using a Monte Carlo SPICE Simulation

机译：使用Monte Carlo SPICE仿真的HCMOS IC中工艺变化的影响

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In this paper, effects of process variations in a HCMOS (High-Speed Complementary Metal Oxide Semiconductor) IC (Integrated Circuit) are examined using a Monte Carlo SPICE (Simulation Program with Integrated Circuit Emphasis) simulation. The variations of the IC are L and VTO variations. An evaluation method is used to evaluate the effects of the variations by modeling it using a normal (Gaussian) distribution. The simulation results show that the IC may be detected as a defective IC caused by the variations based on large supply currents flow to it.

机译：在本文中，使用Monte Carlo SPICE（具有集成电路重点的仿真程序）仿真研究了HCMOS（高速互补金属氧化物半导体）IC（集成电路）中工艺变化的影响。 IC的变化是L和VTO的变化。一种评估方法用于通过使用正态（高斯）分布对其进行建模来评估变化的影响。仿真结果表明，由于流向该集成电路的电源电流较大，该集成电路可能被检测为缺陷集成电路。

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来源
《Kinetik》 |2018年第1期|共6页
作者
Widianto Widianto; Lailis Syafaah; Nurhadi Nurhadi;
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中图分类无线电电子学、电信技术;
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Effects of Process Variations in a HCMOS IC using a Monte Carlo SPICE Simulation

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