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Effect of ZnO Layers on Transport and Relaxation of Charge in Porous Silicon–Silicon Structures

机译：ZnO层对多孔硅-硅结构中电荷迁移和弛豫的影响

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Zinc oxide nanostructures have been grown by electrochemical deposition on porous silicon-silicon substrate. The effect of electrolyte temperature on the morphology of grown ZnO arrays was observed. Temperature dependencies of the electrical conductivity for the structures based on porous silicon were investigated in 80-325 K range. The results are analyzed within the model of disordered semiconductors and the activation energy of charge transport is determined. It is shown that ZnO layers cause the decrease of the electrical conductivity activation energy in 140-250 К temperature range. Electric conductivity was also shown to be dependent on the morphology of ZnO arrays. Based on the spectra of thermally stimulated depolarization current, the localized electron states in the experimental samples are found. The trap levels are distributed quasi-continuously on the activation energy and exist in the ranges of 0.2-0.3, 0.4-0.45, 0.5-0.55 and 0.6-0.65 eV. ZnO nanocrystals grown on porous silicon substrates modify density of states in different energy ranges.
机译：氧化锌纳米结构已经通过电化学沉积在多孔硅硅基底上生长。观察到电解质温度对生长的ZnO阵列的形态的影响。在80-325 K范围内研究了基于多孔硅的结构的电导率的温度依赖性。在无序半导体模型中分析结果，并确定电荷传输的活化能。结果表明，ZnO层在140-250К温度范围内引起电导率活化能的降低。还显示出电导率取决于ZnO阵列的形态。基于热激发的去极化电流的光谱，发现了实验样品中的局部电子态。陷阱能级在活化能上近似连续分布，并且存在于0.2-0.3、0.4-0.45、0.5-0.55和0.6-0.65 eV的范围内。在多孔硅基板上生长的ZnO纳米晶体可改变不同能量范围内的态密度。

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