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首页> 外文期刊>Plasma and Fusion Research >Hydrogen Retention Behavior in Boron Films Affected by Impurities Introduced by Hydrogen Plasma Exposure in the LHD
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Hydrogen Retention Behavior in Boron Films Affected by Impurities Introduced by Hydrogen Plasma Exposure in the LHD

机译：LHD中氢等离子体暴露引入的杂质对硼膜中氢保留行为的影响

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The chemical states of impurities such as oxygen and carbon and their effects on hydrogen retention behavior in pure boron films exposed to hydrogen plasma in the Large Helical Device were investigated by X-ray photoelectron spectroscopy and thermal desorption spectroscopy. The atomic concentrations of the boron films after hydrogen plasma exposure changed from 94% B, 4% C, and 2% O to 68% B, 20% C, and 12% O. B-C bonds and free oxygen were the major chemical states of impurities in the boron films after hydrogen plasma exposure. The hydrogen isotope retention behavior of a hydrogen-plasma-exposed boron film and a D+2 -implanted one clearly differed, and the retention of hydrogen as B-H bonds was reduced by hydrogen plasma exposure owing to the chemical sputtering of hydrogen with free oxygen. In addition, the hydrogen desorption stage was observed as B-C-H bonds at approximately 900 K, although the amount of retention as B-C-H bonds was 10% of the total for a pure boron film exposed to hydrogen plasma.
机译：通过X射线光电子能谱和热脱附光谱研究了大型螺旋装置中暴露于氢等离子体的纯硼膜中氧和碳等杂质的化学状态及其对氢保留行为的影响。氢等离子体暴露后硼膜的原子浓度从94％B，4％C和2％O变为68％B，20％C和12％O。BC键和游离氧是氢等离子体暴露后硼膜中的杂质。氢等离子体暴露的硼膜和注入D + 2 的硼膜的氢同位素保留行为明显不同，并且通过BH键减少了氢的保留由于氢与游离氧的化学溅射，使得氢等离子体暴露。另外，尽管对于暴露于氢等离子体的纯硼膜，作为B-C-H键的保留量为总数的10％，但是在约900K下观察到氢解吸阶段为B-C-H键。

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