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首页> 外文期刊>Journal of Advanced Ceramics >Preparation of TiOSubscript2/Subscript-rich Ba-Ti-O thick films by laser chemical vapor deposition method
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Preparation of TiOSubscript2/Subscript-rich Ba-Ti-O thick films by laser chemical vapor deposition method

机译：激光化学气相沉积法制备富TiO 2 的Ba-Ti-O厚膜

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TiO2-rich Ba-Ti-O films were prepared on Pt/Ti/SiO2/Si substrate by laser chemical vapor deposition (LCVD). Their phase relationship and microstructure were investigated. The single-phase BaTi2O5, Ba4Ti13O30 and BaTi5O11 films were prepared at Ti/Ba molar ratios mTi/Ba = 1.84–1.90, 2.83 and 4.49–4.55, respectively. The high deposition rate of TiO2-rich Ba-Ti-O films ranged from 54.0 μm/h to 177.6 μm/h. The permittivity of BaTi2O5 film (prepared at mTi/Ba = 1.84 and deposition temperature Tdep = 877 K), Ba4Ti13O30 film (prepared at mTi/Ba = 2.83 and Tdep = 914 K) and BaTi5O11 film (prepared at mTi/Ba = 4.49 and Tdep = 955 K) were 50, 40 and 21, respectively.
机译：通过激光化学气相沉积（LCVD）在Pt / Ti / SiO2 / Si衬底上制备了富TiO2的Ba-Ti-O薄膜。研究了它们的相关系和微观结构。单相BaTi2O5，Ba4Ti13O30和BaTi5O11膜分别以Ti / Ba摩尔比mTi / Ba = 1.84-1.90、2.83和4.49-4.55制备。富含TiO2的Ba-Ti-O薄膜的高沉积速率范围为54.0μm/ h至177.6μm/ h。 BaTi2O5薄膜的介电常数（在mTi / Ba = 1.84且沉积温度Tdep = 877 K时），Ba4Ti13O30薄膜（在mTi / Ba = 2.83和Tdep = 914 K时制备）和BaTi5O11薄膜（在mTi / Ba = 4.49时制备） Tdep = 955 K）分别为50、40和21。

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