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首页> 外文期刊>Journal of Advanced Ceramics >Preparation of TiO2-rich Ba-Ti-O thick films by laser chemical vapor deposition method
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Preparation of TiO2-rich Ba-Ti-O thick films by laser chemical vapor deposition method

机译：激光化学气相沉积法制备富TiO2的Ba-Ti-O厚膜

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摘要

TiO2-rich Ba-Ti-0 films were prepared on Pt/Ti/SiO2/si substrate by laser chemical vapor deposition (LCVD). Their phase relationship and microstructure were investigated. The single-phase BaTi2O5, Ba4Ti_(13)O_(30) and BaTi5O_(11) films were prepared at Ti/Ba molar ratios m_(Ti/Ba)= 1.84-1.90, 2.83 and 4.49-4.55, respectively. The high deposition rate of TiO2-rich Ba-Ti-O films ranged from 54.0 μm/h to 177.6 μm/h. The permittivity of BaTi2O5 film (prepared at m_(Ti/Ba)= 1.84 and deposition temperature T_(dep) = 877 K), Ba4Ti_(13)O_(30) film (prepared at m_(Ti/Ba) = 2.83 and T_(dep) = 914 K) and BaTi5O_(11) film (prepared at m_(Ti/Ba)=4.49 and T_(dep) = 955 K) were 50, 40 and 21, respectively.
机译：通过激光化学气相沉积（LCVD）在Pt / Ti / SiO2 / si衬底上制备了富TiO2的Ba-Ti-0薄膜。研究了它们的相关系和微观结构。分别以Ti / Ba摩尔比m_（Ti / Ba）＝ 1.84-1.90、2.83和4.49-4.55制备单相BaTi2O5，Ba4Ti_（13）O_（30）和BaTi5O_（11）膜。富含TiO2的Ba-Ti-O薄膜的高沉积速率范围为54.0μm/ h至177.6μm/ h。 BaTi2O5薄膜的介电常数（在m_（Ti / Ba）= 1.84且沉积温度T_（dep）= 877 K），Ba4Ti_（13）O_（30）薄膜（在m_（Ti / Ba）= 2.83和T_ （dep）= 914 K）和BaTi5O_（11）膜（以m_（Ti / Ba）= 4.49和T_（dep）= 955 K制备）分别为50、40和21。

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