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首页> 外文期刊>Journal of Basic and Applied Physics >Characterization of Cu/Cu Bonding Interface Prepared by Surface Activated Bonding at Room Temperature
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Characterization of Cu/Cu Bonding Interface Prepared by Surface Activated Bonding at Room Temperature

机译：室温表面活化键合制备的Cu / Cu键合界面的表征

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We studied Cu/Cu direct bonding by surface activated bonding at room temperature for the application in 3D integration. The Cu film surfaces were activated by irradiating with an Ar fast atom beam in a high vacuum. For the successful bonding, it is necessary to sufficiently remove the native oxide layer and contaminants on the sample surface. The microstructure of the Cu/Cu direct bonding interface was investigated by transmission electron microscopy, and no intermediate layers or voids were visible at the bonding interface. The absence of oxide at the bonding interface was confirmed by energy dispersive X-ray spectroscopy and electron energy loss spectroscopy. Tensile testing revealed that the bonding strength of the Cu-Cu interface was higher than 8 MPa. The current-voltage characteristic of the bonding was linear.
机译：我们研究了室温下通过表面活化键合进行的Cu / Cu直接键合，以用于3D集成。通过在高真空中用Ar快速原子束照射来活化Cu膜表面。为了成功粘合，必须充分去除样品表面的天然氧化物层和污染物。通过透射电子显微镜研究了Cu / Cu直接键合界面的微观结构，并且在键合界面上没有可见的中间层或空隙。通过能量色散X射线光谱法和电子能量损失光谱法确认了在结合界面处不存在氧化物。拉伸测试表明，Cu-Cu界面的结合强度高于8 MPa。结合的电流-电压特性是线性的。

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