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首页> 外文期刊>Journal of Experimental Nanoscience >Effect of coating and plasma treatments on the induced coupled plasma-reactive ionic etching of boron-doped diamond for microelectromechanical systems (MEMS) applications
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Effect of coating and plasma treatments on the induced coupled plasma-reactive ionic etching of boron-doped diamond for microelectromechanical systems (MEMS) applications

机译:涂层和等离子体处理对微机电系统(MEMS)应用的掺硼金刚石的感应耦合等离子体反应离子刻蚀的影响

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Induced coupled plasma etching was performed on poly-crystalline boron-doped diamond(BDD) films synthesized by microwave assisted chemical vapor deposition (MWCVD). Effectsof the input power and of the gas composition and pressure on etching performances have beeninvestigated. A basic aluminium layer and a new hybridmaterial have been studied as protectingfilm for the patterning. Best conditions to get high etch rates were a gas ratio Ar/O2 of 27%(vol.) under 10 mTorr at 200 W (input power). Aluminium (Al) masking induced un-intentionalwhiskers formation which was removable using CHF3 as a reactive gas with the drawback tolower the process selectivity. In order to get both a high etching rate and a high selectivity, ahybrid material based on an organic/mineral resin was then used as the masking material. Thisperforming photoresist film allowed etching a 3.6-μm-thick BDD film at 200 nm min?1.
机译:对通过微波辅助化学气相沉积(MWCVD)合成的多晶掺硼金刚石(BDD)薄膜进行了诱导耦合等离子体刻蚀。已经研究了输入功率以及气体成分和压力对蚀刻性能的影响。已经研究了基本铝层和新型混合材料作为图案形成的保护膜。获得高蚀刻速率的最佳条件是在200 W(输入功率)下10 mTorr的气体比率Ar / O2为27%(体积)。铝(Al)掩蔽引起意外的晶须形成,可使用CHF3作为反应气体将其去除,但缺点是降低了工艺选择性。为了获得高蚀刻速率和高选择性,然后将基于有机/矿物树脂的混合材料用作掩模材料。这种性能好的光致抗蚀剂膜允许在200nm min-1下蚀刻厚度为3.6μm的BDD膜。

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