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Selective Growth ofα-Al2O3Nanowires and Nanobelts

机译：α-Al2O3纳米线和纳米带的选择性生长

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We report the selective growth ofα-Al2O3nanowires and nanobelts via a catalyst-free chemical vapor deposition process under ambient pressure. By controlling the flow rates of the carrier gas, high-yield production of uniform alumina nanowires with diameter distribution (100 nm–200 nm) was achieved at a high growth rate over 200 μm/hour. Alumina nanobelts with variable width were also synthesized by modulating the carrier gas purge process. Further, the effects of temperatures and carrier gas flow rates on the growth of alumina nanostructures were also investigated. Oxygen partial pressure and supersaturation level of the aluminum suboxide are thought to be important factors in the formation process of the alumina nanowires or nanobelts. The typical growth of the alumina nanowires and nanobelts can be ascribed to vapor-solid (VS) mechanism.
机译：我们报告通过无催化剂化学气相沉积工艺在环境压力下选择性生长的α-Al2O3纳米线和纳米带。通过控制载气的流速，以超过200μm/ h的高增长率实现了具有直径分布（100 nm–200 nm）的均匀氧化铝纳米线的高产量生产。还通过调节载气吹扫过程合成了宽度可变的氧化铝纳米带。此外，还研究了温度和载气流速对氧化铝纳米结构生长的影响。氧分压和过氧化铝的过饱和度被认为是氧化铝纳米线或纳米带形成过程中的重要因素。氧化铝纳米线和纳米带的典型生长可归因于气固（VS）机理。

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