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The enhancement of Hall mobility and conductivity of CVD graphene through radical doping and vacuum annealing

机译：通过自由基掺杂和真空退火增强CVD石墨烯的霍尔迁移率和电导率

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We report an innovative method for chlorine doping of graphene utilizing an inductively coupled plasma system. TEM analysis reveals that the pre-doping (doping before wet transfer) and normal-doping (doping after wet transfer) were generally formed and trapped well between graphene layers; moreover, by thermal stability testing, the chlorine-trapped layer-by-layer graphene showed a very high thermal stability in vacuum at 230?°C for 100 hours. We also obtained the sheet resistance and optical transmittance of the Cl-trapped tri-layer graphene at 72 Ω sq?1 and 95.64% at 550 nm wavelength, respectively. In addition, the high hole mobilities for the chlorine-trapped bi- and tri-layer graphene were observed up to 3352 and 3970 cm2 V?1 s?1, respectively.
机译：我们报告了一种利用感应耦合等离子体系统对石墨烯进行氯掺杂的创新方法。 TEM分析表明，通常在石墨烯层之间形成预掺杂（湿转移之前的掺杂）和普通掺杂（湿转移之后的掺杂）。此外，通过热稳定性测试，氯捕获的逐层石墨烯在真空中在230°C的温度下100小时显示出很高的热稳定性。我们还获得了夹杂Cl的三层石墨烯在550 nm波长下分别为72Ωsq ？1 和95.64％时的薄层电阻和透光率。此外，在高达3352 cm和3970 cm 2 V ？的条件下，观察到了氯捕获的双层和三层石墨烯的高空穴迁移率。 1 s ？1 。

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