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首页> 外文期刊>RSC Advances >Anisotropic ultrahigh hole mobility in two-dimensional penta-SiC2 by strain-engineering: electronic structure and chemical bonding analysis
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Anisotropic ultrahigh hole mobility in two-dimensional penta-SiC2 by strain-engineering: electronic structure and chemical bonding analysis

机译：应变工程在二维五-SiC 2 中的各向异性超高空穴迁移率：电子结构和化学键合分析

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Monolayer pentagonal silicon dicarbide is a 2D material composed entirely of pentagons, and it possesses novel electronic properties possibly leading to many potential applications. In this paper, using first-principles calculations, we have systematically investigated the electronic, mechanical and transport properties of monolayer penta-SiC2 by strain-engineering. By applying in-plane tensile or compressive strain, it is possible to modulate the physical properties of monolayer penta-SiC2, which subsequently changes the transport behaviour of the carriers. More interestingly, at room temperature, the uniaxial compressive strain of ?8% along the a-direction can enhance the hole mobility of monolayer penta-SiC2 along the b-direction by almost three orders of magnitude up to 1.14 × 106 cm2 V?1 s?1, which is much larger than that of graphene, while similar strains have little influence on the electron mobility. The ultrahigh and strain-modulated carrier mobility in monolayer penta-SiC2 may lead to many novel applications in high-performance electronic and optoelectronic devices.
机译：单层五角形碳化硅是一种完全由五边形组成的2D材料，它具有新颖的电子特性，可能导致许多潜在的应用。本文通过第一性原理计算，通过应变工程系统研究了单层五层SiC 2 的电子，机械和传输性能。通过施加面内拉伸或压缩应变，可以调节单层五-SiC 2 的物理性质，从而改变载流子的传输行为。更有趣的是，在室温下，沿 a 方向的8％的单轴压缩应变可以增强单层五层SiC 2 的空穴迁移率。 small>沿 b 方向几乎变了三个数量级，最高为1.14×10 6 cm 2 V ？1 s ？1 ，比石墨烯大得多，而相似的应变对电子迁移率影响很小。五层单晶SiC 2 的超高载流子和可调节载流子迁移率可能会导致在高性能电子和光电器件中的许多新颖应用。

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