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Insights into the role of the interface defects density and the bandgap of the back surface field for efficient p-type silicon heterojunction solar cells

机译:深入了解界面缺陷密度和背面场带隙对有效p型硅异质结太阳能电池的作用

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An n-type silicon wafer appears to be an excellent base material for high efficiency silicon heterojunction solar cells with high annual energy output. The further development of viable p-wafer cells would open many industrial photovoltaic options. Here, the role of the interface defects density and the bandgap of the back surface field of p-type silicon heterojunction solar cells have been investigated in detail to provide guidelines for achieving high performance. The result indicates that the output characteristics of the heterojunction solar cells are sensitive to the density of interface defects (Dit) at both sides of the c-Si surface. However, the output parameters primarily affected by Dit at the front and rear side are not identical. Back surface field (BSF), which aims to reduce photo-generated carriers' recombination at the rear interface, has also been optimized by adjusting the bandgap to improve the collection efficiency. Finally, based on experimental results, we propose that the conversion efficiency of p-type silicon heterojunction solar cells could be increased beyond 23% by efficiently regulating the bifacial Dit and the bandgap of the BSF layer.
机译:n型硅晶片似乎是年均高能量输出的高效硅异质结太阳能电池的优良基础材料。可行的p型晶圆电池的进一步发展将为许多工业光伏技术带来选择。在此,对p型硅异质结太阳能电池的界面缺陷密度和背面场的带隙的作用进行了详细研究,以提供实现高性能的指南。结果表明,异质结太阳能电池的输出特性对界面两侧的界面缺陷密度( D it )敏感。 c-Si表面。但是,主要受正面 D it 影响的输出参数并不相同。旨在减少光生载流子在后界面处重组的背面场(BSF)也已通过调整带隙以提高收集效率进行了优化。最后,根据实验结果,我们建议通过有效地调节双面 D it 和BSF层的带隙。

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