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Deposition potential controlled structural and thermoelectric behavior of electrodeposited CoSb3 thin films

机译:电沉积CoSb 3 薄膜的沉积势控制结构和热电行为

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In this study, the deposition potential has been used to exercise control on structural and electrical properties, and associated tuning of thermoelectric properties of CoSb3 thin films prepared by electrochemical synthesis. Deposition potential is observed to have a strong effect on the stoichiometry of films and orientation of crystallites, and consequently on the physical properties. X-ray diffraction patterns reveal that the films grown at lower deposition potentials (≤?0.9 V) have (013) preferred orientation whereas (420) orientation is observed at higher negative deposition potentials. A correlation of the deposition potential controlled composition from a Sb-rich to a Co-rich regime and the resulting tuning of electrical transport parameters and thermoelectric properties of the CoSb3 thin films is established. With enlarged crystallites and enhanced textured structure at a deposition potential of ?0.97 V, a significantly large Seebeck coefficient (58 μV K?1) with a simultaneously large electrical conductivity (2.1 × 103 Ω?1 cm?1) are achieved as a result of the high mobility (60 cm2 V?1 s?1). A high value for room temperature power factor (706 ± 9 μW K?2 m?1) observed in the as-grown CoSb3 thin films without any further post-deposition annealing makes their synthesis and thermoelectric studies interesting for their potential applications in power generation and refrigeration.
机译:在这项研究中,沉积电位已被用于控制结构和电学性质以及通过电化学合成制备的CoSb 3 薄膜的热电性质的相关调节。观察到沉积势对膜的化学计量和微晶的取向有很大的影响,因此对物理性能也有很大的影响。 X射线衍射图表明,在较低的沉积电势(≤≤0.9V)下生长的膜具有(013)优选的取向,而在较高的负沉积电势下观察到(420)的取向。富Sb富Co沉积势控制成分与CoSb 3 薄膜的电输运参数和热电性能调节的相关性成立。通过在0.97 V的沉积电势下具有较大的微晶和增强的织构结构,塞贝克系数(58μVK ?1 )显着增大,同时电导率也很高(2.1 ×10 3 Ω ?1 cm ?1 )是由于高迁移率(60 cm 2 V ?1 s ?1 )。观察到的室温功率因数较高(706±9μWK ?2 m ?1 CoSb 3 生长的薄膜无需任何进一步的沉积后退火处理,使其合成和热电研究对其在发电和制冷中的潜在应用感兴趣。

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