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首页> 外文期刊>RSC Advances >Na–Ga–Si type-I clathrate single crystals grown via Na evaporation using Na–Ga and Na–Ga–Sn fluxes
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Na–Ga–Si type-I clathrate single crystals grown via Na evaporation using Na–Ga and Na–Ga–Sn fluxes

机译：使用Na-Ga和Na-Ga-Sn助熔剂通过Na蒸发生长的Na-Ga-Si型I笼形单晶

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摘要

Single crystals of a Na–Ga–Si clathrate, Na _(8) Ga _(5.70) Si _(40.30) , of size 2.9 mm were grown via the evaporation of Na from a Na–Ga–Si melt with the molar ratio of Na?:?Ga?:?Si = 4?:?1?:?2 at 773 K for 21 h under an Ar atmosphere. The crystal structure was analyzed using X-ray diffraction with the model of the type-I clathrate (cubic, a = 10.3266(2) ?, space group Pm n , no. 223). By adding Sn to a Na–Ga–Si melt (Na?:?Ga?:?Si?:?Sn = 6?:?1?:?2?:?1), single crystals of Na _(8) Ga _( x ) Si _(46? x ) ( x = 4.94–5.52, a = 10.3020(2)–10.3210(3) ?), with the maximum size of 3.7 mm, were obtained via Na evaporation at 723–873 K. The electrical resistivities of Na _(8) Ga _(5.70) Si _(40.30) and Na _(8) Ga _(4.94) Si _(41.06) were 1.40 and 0.72 mΩ cm, respectively, at 300 K, and metallic temperature dependences of the resistivities were observed. In the Si L _(2,3) soft X-ray emission spectrum of Na _(8) Ga _(5.70) Si _(40.30) , a weak peak originating from the lowest conduction band in the undoped Si _(46) was observed at an emission energy of 98 eV.
机译：通过从Na-Ga-Si熔体中以摩尔比蒸发Na来生长尺寸为2.9 mm的Na-Ga-Si包合物Na_（8）Ga _（5.70）Si _（40.30）单晶。 Na 2 ∶Ga 3 ∶Si ＝ 4 2 ∶1∶1∶2于773K在Ar气氛下反应21小时。使用X射线衍射以I型包合物的模型（立方，a ＝ 10.3266（2）α，空间群Pm n，编号223）分析晶体结构。通过向Na-Ga-Si熔体中添加Sn（Na？：？Ga？：？Si？：？Sn = 6？：？1？：？2？：？1），Na _（8）Ga的单晶_（x）Si _（46？x）（x = 4.94–5.52，a = 10.3020（2）–10.3210（3）？），最大尺寸为3.7 mm，是通过在723–873 K下进行Na蒸发获得的Na _（8）Ga _（5.70）Si _（40.30）和Na _（8）Ga _（4.94）Si _（41.06）在300 K下的电阻率分别为1.40和0.72mΩcm。观察到金属温度与电阻率的关系。在Na _（8）Ga _（5.70）Si _（40.30）的Si L _（2,3）软X射线发射光谱中，一个弱峰源自未掺杂的Si _（46）的最低导带。在98 eV的发射能量下观察到。

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