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Highly sensitive p-type 4H-SiC van der Pauw sensor

机译：高灵敏度p型4H-SiC van der Pauw传感器

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摘要

This paper presents for the first time a p-type 4H silicon carbide (4H-SiC) van der Pauw strain sensor by utilizing the strain induced effect in four-terminal devices. The sensor was fabricated from a 4H-SiC (0001) wafer, using a 1 μm thick p-type epilayer with a concentration of 1018 cm?3. Taking advantage of the four-terminal configuration, the sensor can eliminate the need for resistance-to-voltage conversion which is typically required for two-terminal devices. The van der Pauw sensor also exhibits an excellent repeatability and linearity with a significantly large output voltage in induced strain ranging from 0 to 334 ppm. Various sensors aligned in different orientations were measured and a high sensitivity of 26.3 ppm?1 was obtained. Combining these performances with the excellent mechanical strength, electrical conductivity, thermal stability, and chemical inertness of 4H-SiC, the proposed sensor is promising for strain monitoring in harsh environments.
机译：本文首次利用四端子器件中的应变感应效应，提出了一种p型4H碳化硅（4H-SiC）van der Pauw应变传感器。传感器由4H-SiC（0001）晶圆制成，使用1μm厚的p型外延层，浓度为10 18 cm 3 。利用四端子配置，该传感器可以消除两端子设备通常需要的电阻到电压转换。 van der Pauw传感器还具有出色的可重复性和线性度，在0至334 ppm的感应应变范围内具有显着的大输出电压。测量了在不同方向排列的各种传感器，并获得了26.3 ppm ？1 的高灵敏度。将这些性能与4H-SiC的出色机械强度，导电性，热稳定性和化学惰性相结合，该传感器有望在恶劣环境中进行应变监测。

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