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首页> 外文期刊>RSC Advances >Synthesis of simple, low cost and benign sol–gel Cu2InxZn1?xSnS4 alloy thin films: influence of different rapid thermal annealing conditions and their photovoltaic solar cells
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Synthesis of simple, low cost and benign sol–gel Cu2InxZn1?xSnS4 alloy thin films: influence of different rapid thermal annealing conditions and their photovoltaic solar cells

机译：简单，低成本，良性溶胶-凝胶Cu2InxZn1？xSnS4合金薄膜的合成：不同快速热退火条件及其光伏太阳能电池的影响

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Cu _(2) In _( x ) Zn _(1? x ) SnS _(4) ( x = 0.4) alloy thin films were synthesized on soda lime glass (SLG) substrate by a simple low-cost sol–gel method followed by a rapid annealing technique. The influence of sulfurization temperature and sulfurization time on the structure, morphology, optical and electrical properties of Cu _(2) In _( x ) Zn _(1? x ) SnS _(4) thin films was investigated in detail. The XRD and Raman results indicated that the crystalline quality of the Cu _(2) In _( x ) Zn _(1? x ) SnS _(4) alloy thin films was improved, accompanied by metal deficiency, particularly tin loss with increasing the sulfurization temperature and sulfurization time. From absorption spectra it is found that the band gaps of all Cu _(2) In _( x ) Zn _(1? x ) SnS _(4) films are smaller than that (1.5 eV) of the pure CZTS film due to In doping, and the band gap of the Cu _(2) In _( x ) Zn _(1? x ) SnS _(4) films can be tuned in the range of 1.38 to 1.19 eV by adjusting the sulfurization temperature and sulfurization time. Hall measurement results showed that all Cu _(2) In _( x ) Zn _(1? x ) SnS _(4) alloy thin films showed p-type conductivity characteristics, the hole concentration decreased and the mobility increased with the increase of sulfurization temperature and sulfurization time, which is attributed to the improvement of the crystalline quality and the reduction of grain boundaries. Finally, the Cu _(2) In _( x ) Zn _(1? x ) SnS _(4) film possessing the best p-type conductivity with a hole concentration of 9.06 × 10 ~(16) cm ~(?3) and a mobility of 3.35 cm ~(2) V ~(?1) s ~(?1) was obtained at optimized sulfurization condition of 580 °C for 60 min. The solar cell using Cu _(2) In _( x ) Zn _(1? x ) SnS _(4) as the absorber obtained at the optimized sulfurization conditions of 580 °C for 60 min demonstrates a power conversion efficiency of 2.89%. We observed an increment in open circuit voltage by 90 mV. This work shows the promising role of In in overcoming the low V _(oc) issue in Cu-kesterite thin film solar cells.
机译：Cu_（2）In_（x）Zn _（1？x）SnS _（4）（x = 0.4）通过简单的低成本溶胶凝胶法在钠钙玻璃（SLG）衬底上合成合金薄膜其次是快速退火技术。详细研究了硫化温度和硫化时间对Cu_（2）In_（x）Zn_（1×x）SnS_（4）薄膜的结构，形貌，光学和电学性质的影响。 XRD和拉曼结果表明，Cu _（2）In _（x）Zn _（1？x）SnS _（4）合金薄膜的晶体质量得到改善，伴随着金属缺陷，特别是锡损失的增加。硫化温度和硫化时间。从吸收光谱中发现，由于以下原因，所有Cu _（2）In _（x）Zn _（1？x）SnS _（4）薄膜的带隙均小于纯CZTS薄膜的带隙（1.5 eV）。在掺杂中，通过调节硫化温度和硫化程度，可以将Cu _（2）In _（x）Zn _（1？x）SnS _（4）的带隙调整到1.38至1.19 eV的范围内。时间。霍尔测量结果表明，所有的Cu _（2）In _（x）Zn _（1？x）SnS _（4）合金薄膜均表现出p型导电特性，空穴浓度随迁移率的增加而降低，迁移率随硫化温度和硫化时间，这归因于结晶质量的改善和晶界的减少。最后，Cu _（2）In _（x）Zn _（1？x）SnS _（4）膜具有最佳的p型导电性，其空穴浓度为9.06×10〜（16）cm〜（？3） ），并在580°C的最佳硫化条件下60分钟获得了3.35 cm〜（2）V〜（？1）s〜（？1）的迁移率。以Cu _（2）In _（x）Zn _（1？x）SnS _（4）为吸收剂的太阳能电池在580°C的最佳硫化条件下60分钟获得的功率转换效率为2.89％ 。我们观察到开路电压增加了90 mV。这项工作显示了In在克服Cu-kesterite薄膜太阳能电池中的低V_（oc）问题方面的有希望的作用。

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