Synthesis of simple, low cost and benign sol-gel Cu2InxZn1-xSnS4 alloy thin films: influence of different rapid thermal annealing conditions and their photovoltaic solar cells

Sui Yingrui; Wu Yanjie; Zhang Yu; Wang Fengyou; Gao Yanbo; Lv Shiquan; Wang Zhanwu; Sun Yunfei; Wei Maobin; Yao Bin; Yang Lili

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Synthesis of simple, low cost and benign sol-gel Cu2InxZn1-xSnS4 alloy thin films: influence of different rapid thermal annealing conditions and their photovoltaic solar cells

机译：简单，低成本和良性溶胶 - 凝胶Cu2InxZn1-XSNS4合金薄膜的合成：不同快速热退火条件及其光伏太阳能电池的影响

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Cu2In1-xZn1-xSnS4 (x = 0.4) alloy thin films were synthesized on soda lime glass (SLG) substrate by a simple low-cost sol-gel method followed by a rapid annealing technique. The influence of sulfurization temperature and sulfurization time on the structure, morphology, optical and electrical properties of Cu2In1-xZn1-xSnS4 thin films was investigated in detail. The XRD and Raman results indicated that the crystalline quality of the Cu2In1-xZn1-xSnS4 alloy thin films was improved, accompanied by metal deficiency, particularly tin loss with increasing the sulfurization temperature and sulfurization time. From absorption spectra it is found that the band gaps of all Cu(2)In(1-x)Zn(1-x)SnS(4 )films are smaller than that (1.5 eV) of the pure CZTS film due to In doping, and the band gap of the Cu2In1-xZn1-xSnS4 films can be tuned in the range of 1.38 to 1.19 eV by adjusting the sulfurization temperature and sulfurization time. Hall measurement results showed that all Cu2In1-xZn1-xSnS4 alloy thin films showed p-type conductivity characteristics, the hole concentration decreased and the mobility increased with the increase of sulfurization temperature and sulfurization time, which is attributed to the improvement of the crystalline quality and the reduction of grain boundaries. Finally, the Cu2In1-xZn1-xSnS4 film possessing the best p-type conductivity with a hole concentration of 9.06 x 10(16)cm(3) and a mobility of 3.35 cm(2)V(-1)s(-i) was obtained at optimized sulfurization condition of 580 degrees C for 60 min. The solar cell using Cu2In1-xZn1-xSnS4 as the absorber obtained at the optimized sulfurization conditions of 580 degrees C for 60 min demonstrates a power conversion efficiency of 2.89%. We observed an increment in open circuit voltage by 90 mV. This work shows the promising role of In in overcoming the low V-OC, issue in Cu-kesterite thin film solar cells.

机译：通过简单的低成本溶胶 - 凝胶法在苏打石灰玻璃（SLG）基板上合成Cu2In1-XZN1-XSNS4（X = 0.4）合金薄膜，然后通过快速退火技术在钠钙玻璃（SLG）基板上。详细研究了硫化温度和硫化时间对Cu2In1-XZN1-XSNS4薄膜的结构，形态，光学和电性能的影响。 XRD和拉曼结果表明Cu2In1-XZN1-XSNS4合金薄膜的晶体质量得到改善，伴随金属缺乏，特别是硫化温度和硫化时间的损失。从吸收光谱发现，（1-x）zn（1-x）sns（4）膜中所有Cu（2）的带间隙小于掺杂引起的纯CZTS膜的（1.5eV）和Cu2In1-xZn1-xSnS4膜的带隙可在1.38到1.19电子伏特的范围内通过调节硫化温度和硫化时间调整。霍尔测量结果表明，所有Cu2In1-xZn1-xSnS4合金薄膜显示p型导电性的特性，空穴浓度降低，流动性与硫化温度和硫化时间的增加，这归因于该结晶品质的提高增加和晶界的减少。最后，Cu2In1-xZn1-xSnS4膜具有与9.06×10（16）厘米（3）和3.35厘米的迁移率的空穴浓度最好p型导电性（2）V（-1）S（-i）在优化的硫化条件下在580℃下获得60分钟。使用Cu2In1-xZn1-xSnS4如在580摄氏度60分钟优化硫化条件下获得的吸收器中的太阳能电池演示2.89％的功率转换效率。我们观察到开路电压的增量90 mV。这项工作表明，在克服低V-oc，在Cu-ketertite薄膜太阳能电池中发出的有希望的作用。

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来源
《RSC Advances》 |2018年第17期|共11页
作者
Sui Yingrui; Wu Yanjie; Zhang Yu; Wang Fengyou; Gao Yanbo; Lv Shiquan; Wang Zhanwu; Sun Yunfei; Wei Maobin; Yao Bin; Yang Lili;
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作者单位

Jilin Normal Univ Minist Educ Key Lab Funct Mat Phys &

Chem Siping 136000 Jilin Peoples R China;

Jilin Normal Univ Minist Educ Key Lab Funct Mat Phys &

Chem Siping 136000 Jilin Peoples R China;

Jilin Normal Univ Minist Educ Key Lab Funct Mat Phys &

Chem Siping 136000 Jilin Peoples R China;

Jilin Normal Univ Minist Educ Key Lab Funct Mat Phys &

Chem Siping 136000 Jilin Peoples R China;

Jilin Normal Univ Minist Educ Key Lab Funct Mat Phys &

Chem Siping 136000 Jilin Peoples R China;

Jilin Normal Univ Minist Educ Key Lab Funct Mat Phys &

Chem Siping 136000 Jilin Peoples R China;

Jilin Normal Univ Minist Educ Key Lab Funct Mat Phys &

Chem Siping 136000 Jilin Peoples R China;

Jilin Normal Univ Minist Educ Key Lab Funct Mat Phys &

Chem Siping 136000 Jilin Peoples R China;

Jilin Normal Univ Minist Educ Key Lab Funct Mat Phys &

Chem Siping 136000 Jilin Peoples R China;

Jilin Univ Coll Phys State Key Lab Superhard Mat Changchun 130012 Jilin Peoples R China;

Jilin Normal Univ Minist Educ Key Lab Funct Mat Phys &

Chem Siping 136000 Jilin Peoples R China;

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1. Synthesis of simple, low cost and benign sol-gel Cu2InxZn1-xSnS4 alloy thin films: influence of different rapid thermal annealing conditions and their photovoltaic solar cells [J] . Sui Yingrui, Wu Yanjie, Zhang Yu, RSC Advances . 2018,第17期

机译：简单，低成本和良性溶胶 - 凝胶Cu2InxZn1-XSNS4合金薄膜的合成：不同快速热退火条件及其光伏太阳能电池的影响
2. Synthesis of simple, low cost and benign sol–gel Cu2InxZn1?xSnS4 alloy thin films: influence of different rapid thermal annealing conditions and their photovoltaic solar cells [J] . Yingrui Sui, Yanjie Wu, Yu Zhang, RSC Advances . 2018,第17期

机译：简单，低成本，良性溶胶-凝胶Cu2InxZn1？xSnS4合金薄膜的合成：不同快速热退火条件及其光伏太阳能电池的影响
3. Synthesis of simple, low cost and benign sol–gel Cu2InxZn1?xSnS4 alloy thin films: influence of different rapid thermal annealing conditions and their photovoltaic solar cells [J] . Yingrui Sui, Yanjie Wu, Yu Zhang, RSC Advances . 2018,第17期

机译：简单，低成本，良性溶胶-凝胶Cu2InxZn1？xSnS4合金薄膜的合成：不同快速热退火条件及其光伏太阳能电池的影响
4. Influence of annealing condition on the photovoltaic performance of Cu2ZnSnSe4 thin film solar cells [C] . Shou-Yi Kuo, Jui-Fu Yang, Fang-I Lai, IEEE Photovoltaic Specialists Conference . 2013

机译：退火条件对Cu2ZnSnSe4薄膜太阳能电池光伏性能的影响
5. Pulsed laser annealing and rapid thermal annealing of copper-indium-gallium-diselenide-based thin film solar cells. [D] . Wang, Xuege. 2005

机译：基于铜-铟-镓-二硒化物的薄膜太阳能电池的脉冲激光退火和快速热退火。
6. Synthesis of Ge1−xSnx Alloy Thin Films by Rapid Thermal Annealing of Sputtered Ge/Sn/Ge Layers on Si Substrates [O] . Hadi Mahmodi, Md Roslan Hashim, Tetsuo Soga, 2018

机译：通过硅衬底上溅射的Ge / Sn / Ge层的快速热退火合成Ge1-xSnx合金薄膜
7. Synthesis of simple, low cost and benign sol–gel Cu2InxZn1−xSnS4alloy thin films: influence of different rapid thermal annealing conditions and their photovoltaic solar cells [O] . Yingrui Sui, Yanjie Wu, Yu Zhang, 2018

机译：简单，低成本和良性溶胶 - 凝胶Cu2InxZn1-Xsnsnoloy薄膜的合成：不同快速热退火条件及其光伏太阳能电池的影响

Synthesis of simple, low cost and benign sol-gel Cu2InxZn1-xSnS4 alloy thin films: influence of different rapid thermal annealing conditions and their photovoltaic solar cells

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