High on-current field effect transistors (FETs) are highly desirable for driving information displays such as active matrix organic light-emitting diode displays. Herein, indium-doped ZnO (IZO) horizontal nanorod arrays were fabricated for high on-current FETs by a facile and tunable hydrothermal method. We have found that indium doping can influence the growth behavior of ZnO nanorods. After indium doping, the ZnO nanorods tend to grow better along the horizontal direction and have a better flat morphology. More importantly, indium doping increases the carrier concentration of the IZO nanorods; this leads to better transfer and output performances of the IZO nanorod FETs. Therefore, the IZO nanorod FET with a high on-current of 6.39 × 10?4 A and a field effect mobility of 26.3 cm2 V?1 s?1 has been synthesized and demonstrated in this study.
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机译：对于驱动诸如有源矩阵有机发光二极管显示器之类的信息显示器，非常需要高导通电流场效应晶体管（FET）。本文中，通过一种简便且可调节的水热法制备了用于高导通电流FET的铟掺杂ZnO（IZO）水平纳米棒阵列。我们已经发现，铟掺杂可以影响ZnO纳米棒的生长行为。铟掺杂后，ZnO纳米棒趋于沿水平方向生长得更好，并具有更好的平坦形态。更重要的是，铟掺杂增加了IZO纳米棒的载流子浓度;这导致了IZO纳米棒FET的更好的传输和输出性能。因此，具有6.39×10 ？4 A的高导通电流和26.3 cm 2 的场效应迁移率的IZO纳米棒FET合成并证明了sup> V ？1 s ？1 。
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