Indium-doped ZnO horizontal nanorods for high on-current field effect transistors

Zhu Ziqiang; Li Borui; Wen Jian; Chen Zhao; Chen Zhiliang; Zhang Ranran; Ye Shuangli; Fang Guojia; Qian Jun

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Indium-doped ZnO horizontal nanorods for high on-current field effect transistors

机译：高电流场效应晶体管的铟掺杂ZnO水平纳米棒

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High on-current field effect transistors (FETs) are highly desirable for driving information displays such as active matrix organic light-emitting diode displays. Herein, indium-doped ZnO (IZO) horizontal nanorod arrays were fabricated for high on-current FETs by a facile and tunable hydrothermal method. We have found that indium doping can influence the growth behavior of ZnO nanorods. After indium doping, the ZnO nanorods tend to grow better along the horizontal direction and have a better flat morphology. More importantly, indium doping increases the carrier concentration of the IZO nanorods; this leads to better transfer and output performances of the IZO nanorod FETs. Therefore, the IZO nanorod FET with a high on-current of 6.39 x 10(-4) A and a field effect mobility of 26.3 cm(2) V-1 s(-1) has been synthesized and demonstrated in this study.

机译：对于诸如有源矩阵有机发光二极管显示器的驱动信息显示，高度期望高的电流场效应晶体管（FET）非常希望。这里，通过容易和可调谐的水热方法制造铟掺杂的ZnO（IZO）水平纳米棒阵列，用于高电流的流体方法。我们发现铟掺杂可以影响ZnO纳米棒的生长行为。在铟掺杂之后，ZnO纳米棒沿水平方向倾向于成长，并且具有更好的平坦形态。更重要的是，铟掺杂增加了IZO纳米棒的载体浓度; 这导致IZO纳米棒FET的更好的转移和输出性能。因此，在本研究中已经合成并证明了具有高6.39×10（-4）a和26.3cm（2）v-1s（-1）的磁场效果迁移率的IZO纳米棒FET。

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来源
《RSC Advances》 |2017年第87期|共6页
作者
Zhu Ziqiang; Li Borui; Wen Jian; Chen Zhao; Chen Zhiliang; Zhang Ranran; Ye Shuangli; Fang Guojia; Qian Jun;
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作者单位

Wuhan Univ Sch Printing &

Packaging Wuhan 430072 Hubei Peoples R China;

Wuhan Univ Sch Phys &

Technol Wuhan 430072 Hubei Peoples R China;

Wuhan Univ Sch Phys &

Technol Wuhan 430072 Hubei Peoples R China;

Wuhan Univ Sch Phys &

Technol Wuhan 430072 Hubei Peoples R China;

Wuhan Univ Sch Phys &

Technol Wuhan 430072 Hubei Peoples R China;

Wuhan Univ Sch Printing &

Packaging Wuhan 430072 Hubei Peoples R China;

Wuhan Univ Sch Printing &

Packaging Wuhan 430072 Hubei Peoples R China;

Wuhan Univ Sch Phys &

Technol Wuhan 430072 Hubei Peoples R China;

Wuhan Univ Sch Printing &

Packaging Wuhan 430072 Hubei Peoples R China;

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正文语种 eng
中图分类化学;
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1. Indium-doped ZnO horizontal nanorods for high on-current field effect transistors [J] . Zhu Ziqiang, Li Borui, Wen Jian, RSC Advances . 2017,第87期

机译：高电流场效应晶体管的铟掺杂ZnO水平纳米棒
2. Indium-doped ZnO horizontal nanorods for high on-current field effect transistors [J] . Ziqiang Zhu, Borui Li, Jian Wen, RSC Advances . 2017,第87期

机译：用于高导通场效应晶体管的铟掺杂ZnO水平纳米棒
3. Lateral growth of ZnO nanorod arrays in polyhedral structures for high on-current field-effect transistors [J] . Yong-Kyu Park, Won-Yeop Rho, Tahmineh Mahmoudi, Chemical Communications . 2014,第72期

机译：高通态场效应晶体管多面体结构中ZnO纳米棒阵列的横向生长
4. Manufacture and characterization of the single ZnO nanorod field-effect transistor [C] . Tsai Jenn-Kai, Wu Tian-Chiuan, Shih Jun-Hong, 2011 IEEE 4th International Nanoelectronics Conference . 2011

机译：单个ZnO纳米棒场效应晶体管的制造与表征
5. Development of ZnO-based thin film transistors and phosphorus-doped ZnO and (Zn, Mg)O by pulsed laser deposition. [D] . Li, Yuanjie. 2006

机译：通过脉冲激光沉积开发基于ZnO的薄膜晶体管和掺磷的ZnO和（Zn，Mg）O。
6. Integrated ZnO Nano-Electron-Emitter with Self-Modulated Parasitic Tunneling Field Effect Transistor at the Surface of the p-Si/ZnO Junction [O] . Tao Cao, Laitang Luo, Yifeng Huang, -1

机译：在p-Si / ZnO结的表面具有自调制寄生隧穿场效应晶体管的集成ZnO纳米电子发射器
7. Coulomb Oscillations of Indium-doped ZnO Nanowire Transistors in a Magnetic Field [O] . Xu, Xiulai, Irvine, Andrew C., Yang, Yang, 2010

机译：铟掺杂ZnO纳米线晶体管的库仑振荡磁场

Indium-doped ZnO horizontal nanorods for high on-current field effect transistors

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