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Stress-engineered growth of homoepitaxial GaN crystals using hydride vapor phase epitaxy

机译：氢化物气相外延法对同质外延GaN晶体进行应力工程生长

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摘要

We report the growth of a 3.5 mm-thick bulk GaN layer using a stress-engineered homoepitaxy method without any external processes. We employ a gradient V/III ratio during the growth, which enables a 3.5 mm-thick bulk GaN layer with a smooth surface and high crystal quality to be obtained. For a constant V/III ratio of 10, the bulk GaN layer has a flat surface; however, microcracks emerge in the GaN layer. For a constant V/III ratio of 38, the bulk GaN layer has a rough surface, without microcracks. On the other hand, by decreasing the V/III ratio from 38 to 10, the structural properties of the GaN layers are successfully controlled. The higher V/III ratio in the initial growth stage leads to a rough surface, and reduced stress and dislocation density in the bulk GaN layers, while the lower V/III ratio in the second stage of the growth provides an opposite trend, confirmed by Raman spectroscopy and X-ray measurements. We expect that this study will offer a new opportunity to achieve the growth of high-crystallinity bulk GaN without ex situ and complicated processes.
机译：我们报告了使用应力工程均质外延法在没有任何外部工艺的情况下生长了3.5毫米厚的块状GaN层的情况。我们在生长过程中采用了梯度V / III比，这使得能够获得3.5毫米厚的块状GaN层，并具有光滑的表面和高晶体质量。对于恒定的V / III比10，体GaN层具有平坦的表面;但是，在GaN层中会出现微裂纹。对于38的恒定V / III比，体GaN层具有粗糙的表面，没有微裂纹。另一方面，通过将V / III比从38减小到10，可以成功地控制GaN层的结构特性。初始生长阶段较高的V / III比导致粗糙的表面，并降低了整体GaN层中的应力和位错密度，而第二阶段生长较低的V / III比则提供了相反的趋势，这一点已得到证实。拉曼光谱和X射线测量。我们希望，这项研究将为实现高结晶度块状GaN的生长提供新的机会，而无需进行异位和复杂的工艺。

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