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首页> 外文期刊>Crystal growth & design >Homoepitaxial Hydride Vapor Phase Epitaxy Growth on GaN Wafers Manufactured by the Na-Flux Method
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Homoepitaxial Hydride Vapor Phase Epitaxy Growth on GaN Wafers Manufactured by the Na-Flux Method

机译：通过Na-Flux方法制造的GaN晶片上的同性端氢化物气相外延生长

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摘要

Homoepitaxial hydride vapor phase epitaxy (HVPE) growth on GaN substrates grown with a Na-flux method, which is the most promising approach for fabrication of large-diameter, low-dislocation-density, fast-growing GaN wafers, was attempted for the first time. We found that, when different growth methods are combined, the differences in oxygen concentrations between a seed and grown crystal must be eliminated to maintain the crystallographic quality of the seed. Two kinds of Na-flux-grown seed crystals were prepared; one had a surface composed of c, {10 (1) over bar2}, and {10 (1) over bar1} planes, the other a surface composed entirely of c-planes. Both crystals were sliced, ground, mirror-polished, and applied for 500-mu m-thick HVPE growth. In the former sample, the seed crystal generated fine cracks, and the epitaxially grown layer had a rough surface and included many dislocations; the latter sample showed no fault. For clarifying the mechanism of crystal degradation, we investigated the lattice constants of each growth sector using an X-ray microbeam and found that lattice constants in the {10-(1) over bar1}-growth sector were expanded compared to those in other growth sectors due to oxygen impurities. These values were estimated to be much larger than those of HVPE crystals, resulting in the crystal degradation after the HVPE growth by a lattice mismatch.
机译：用Na-Flux法生长的GaN底物的同性端氢化物气相外延（HVPE）生长，这是第一个制造大直径，低位小脱位密度快速生长的GaN晶片的最有希望的方法。时间。我们发现，当组合不同的生长方法时，必须消除种子和生长晶体之间的氧浓度的差异以保持种子的晶体质量。制备两种Na-Flux生长的晶种;一个具有由C，{10（1）上方Bar2}的表面组成，并且{10（1）上方的玻璃架，另一个完全由C平面组成的表面。将两个晶体切成切片，研磨，镜面抛光，并施加500μm厚的HVPE生长。在前一种样品中，种子晶体产生的细裂纹，外延生长的层具有粗糙的表面并包括许多脱位;后一种样品没有错。为了澄清晶体劣化的机理，我们使用X射线微沟研究了每个生长域的晶格常数，发现{10-（1）上的晶片常数与其他生长中的{10-（1）}} -Growth Sector进行扩大由于氧气杂质引起的部门。估计这些值远远大于HVPE晶体的晶体，导致晶格错配后的HVPE生长后晶体劣化。

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  • 来源
    《Crystal growth & design》 |2017年第7期|共6页
  • 作者

    Imanishi Masayuki; Yoshida Takehiro; Kitamura Toshio; Murakami Kosuke; Imade Mamoru; Yoshimura Masashi; Shibata Masatomo; Tsusaka Yoshiyuki; Matsui Junji; Mori Yusuke;

  • 作者单位

    Osaka Univ Div Elect Elect &

    Informat Engn 2-2 Yamada Oka Suita Osaka 5650871 Japan;

    SCIOCS 880 Isagozawa Cho Hitachi Ibaraki 3191418 Japan;

    SCIOCS 880 Isagozawa Cho Hitachi Ibaraki 3191418 Japan;

    Osaka Univ Div Elect Elect &

    Informat Engn 2-2 Yamada Oka Suita Osaka 5650871 Japan;

    Osaka Univ Div Elect Elect &

    Informat Engn 2-2 Yamada Oka Suita Osaka 5650871 Japan;

    Osaka Univ Div Elect Elect &

    Informat Engn 2-2 Yamada Oka Suita Osaka 5650871 Japan;

    SCIOCS 880 Isagozawa Cho Hitachi Ibaraki 3191418 Japan;

    Univ Hyogo Grad Sch Mat Sci 3-2-1 Kouto Kamigori Cho Kobe Hyogo 6781297 Japan;

    Univ Hyogo Synchrotron Radiat Nanotechnol Ctr 1-490-2 Kouto Shingu Cho Tatsuno Hyogo 6795165 Japan;

    Osaka Univ Div Elect Elect &

    Informat Engn 2-2 Yamada Oka Suita Osaka 5650871 Japan;

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  • 正文语种 eng
  • 中图分类 晶体学;
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