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A univariate ternary logic and three-valued multiplier implemented in a nano-columnar crystalline zinc oxide memristor

机译：在纳米柱状晶体氧化锌忆阻器中实现的单变量三元逻辑和三值乘法器

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Memristors, which feature small sizes, fast speeds, low power, CMOS compatibility and nonvolatile modulation of device resistance, are promising candidates for next-generation data storage and in-memory computing paradigms. Compared to the binary logics enabled by memristor devices, ternary logics with larger information-carrying capacity can provide higher computation efficiency with simple operation schemes, reduced circuit complexity and smaller chip areas. In this study, we report the fabrication of memristor devices based on nano-columnar crystalline ZnO thin films; they show symmetric and reliable multi-level resistive switching characteristics over three hundred cycles, which benefits the implementation of univariate ternary logic operations. Experimental results demonstrate that a three-valued logic complete set can be realized by the univariate operations of the present ZnO memristor device, and a ternary multiplier unit circuit is designed for potential applications. The present methodology can be beneficial for constructing future high-performance computation architectures.
机译：忆阻器具有体积小，速度快，低功耗，CMOS兼容性以及器件电阻的非易失性调制等优点，它们有望成为下一代数据存储和内存计算范例的候选者。与忆阻器器件支持的二进制逻辑相比，具有更大信息承载能力的三进制逻辑可以通过简单的操作方案，降低的电路复杂性和较小的芯片面积提供更高的计算效率。在这项研究中，我们报告了基于纳米柱状晶体ZnO薄膜的忆阻器器件的制造。它们在三百个周期内显示出对称且可靠的多级电阻开关特性，这有利于单变量三元逻辑运算的实现。实验结果表明，本发明的ZnO忆阻器器件的单变量运算可以实现三值逻辑完整集，并且为潜在的应用设计了三元乘法器单元电路。本方法学对于构造未来的高性能计算架构可能是有益的。

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