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A univariate ternary logic and three-valued multiplier implemented in a nano-columnar crystalline zinc oxide memristor

机译:在纳米柱晶锌氧化物存储器中实现的单变量三元逻辑和三值乘法器

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摘要

Memristors, which feature small sizes, fast speeds, low power, CMOS compatibility and nonvolatile modulation of device resistance, are promising candidates for next-generation data storage and in-memory computing paradigms. Compared to the binary logics enabled by memristor devices, ternary logics with larger information-carrying capacity can provide higher computation efficiency with simple operation schemes, reduced circuit complexity and smaller chip areas. In this study, we report the fabrication of memristor devices based on nano-columnar crystalline ZnO thin films; they show symmetric and reliable multi-level resistive switching characteristics over three hundred cycles, which benefits the implementation of univariate ternary logic operations. Experimental results demonstrate that a three-valued logic complete set can be realized by the univariate operations of the present ZnO memristor device, and a ternary multiplier unit circuit is designed for potential applications. The present methodology can be beneficial for constructing future high-performance computation architectures.
机译:具有小尺寸,快速速度,低功耗,CMOS兼容性和设备电阻的非易失性调制的忆故函是下一代数据存储和内存计算范例的承诺候选者。与Memitrist设备启用的二进制逻辑相比,具有较大信息承载能力的三元逻辑可以通过简单的操作方案,减少电路复杂度和更小的芯片区域提供更高的计算效率。在这项研究中,我们报告了基于纳米柱晶体ZnO薄膜的椎管器件的制造;它们显示了超过三百周期的对称和可靠的多级电阻切换特性,这有利于实施单变量三元逻辑操作。实验结果表明,通过本ZnO Memitristor设备的单变量操作可以实现三维逻辑完整集,并且针对潜在的应用设计了三元乘法器单元电路。本方法可能有利于构建未来的高性能计算架构。

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    《RSC Advances》 |2019年第42期|共8页
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  • 正文语种 eng
  • 中图分类 化学;
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