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首页> 外文期刊>Bulletin of the American Physical Society >APS -APS March Meeting 2017 - Event - Passivation and Depassivation of Defects in Graphene-based field-effect transistors
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APS -APS March Meeting 2017 - Event - Passivation and Depassivation of Defects in Graphene-based field-effect transistors

机译：APS -APS 2017年3月会议-活动-基于石墨烯的场效应晶体管中缺陷的钝化和钝化

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摘要

Field effect transistors based on graphene on amorphous SiO$_{mathrm{2}}$ substrates were fabricated, both with and without a top oxide passivation layer of Al$_{mathrm{2}}$O$_{mathrm{3}}$. Initial I-V characteristics of these devices show that the Fermi energy occurs below the Dirac point in graphene (i.e. p-type behavior). Introduction of environmental stresses, e.g. baking the devices, causes a shift in the Fermi energy relative to the Dirac point. 1/f noise measurements indicate the presence of charge trapping defects. In order to find the origins of this behavior, we construct atomistic models of the substrate/graphene interface and the graphene/oxide passivation layer interface. Using density functional theory, we investigate the role that the introduction and removal of hydrogen and hydroxide passivants has on the electronic structure of the graphene layer as well as the relative energetics for these processes to occur in order to gain insights into the experimental results.
机译：制备了具有石墨烯的非晶SiO $ _ {mathrm {2}} $衬底上的场效应晶体管，该衬底具有和不具有Al $ _ {mathrm {2}} $ O $ _ {mathrm {3}的顶部氧化物钝化层} $。这些器件的初始I-V特性表明费米能量出现在石墨烯的狄拉克点以下（即p型行为）。引入环境压力，例如烘烤设备，导致费米能量相对于狄拉克点的移动。 1 / f噪声测量表明存在电荷陷阱缺陷。为了找到这种行为的根源，我们构建了基底/石墨烯界面和石墨烯/氧化物钝化层界面的原子模型。使用密度泛函理论，我们研究了氢和氢氧根钝化剂的引入和去除对石墨烯层电子结构的作用以及发生这些过程的相对能，以获取对实验结果的了解。

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