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首页> 外文期刊>Bulletin of the American Physical Society >APS -2017 Annual Fall Meeting of the APS Ohio-Region Section - Event - Electrical properties of Ti/SiC Schottky barrier diodes
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APS -2017 Annual Fall Meeting of the APS Ohio-Region Section - Event - Electrical properties of Ti/SiC Schottky barrier diodes

机译：APS -2017 APS俄亥俄州地区分会年度秋季会议-活动-Ti / SiC肖特基势垒二极管的电性能

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Silicon carbide Schottky barrier diodes were fabricated with Ti Schottky contacts. The contacts were deposited at different temperatures ranging from 28 $^o$C to 900 $^o$C using a magnetron sputtering deposition system. The diodes were then annealed at 500 $^o$C in vacuum for up to 60 hours. Diodes with the contacts deposited at 200 $^o$C and annealed for 60 hours had the optimum current-voltage characteristics consisting of large barrier height of 1.13 eV and ideality factor of 1.04. These diodes also had a very low leakage current of 6.6 x 10-$^8$ A at a reverse voltage bias of 400 V. The X-ray diffraction analysis of the Ti/SiC contacts revealed the formation of TiC, Ti5Si3 and Ti3SiC2 at the interface. The improved properties for diodes with contacts deposited at 200 $^o$C could be related to formation of reaction products possessing high work functions. These improvements could provide significant gains in performance of 4H-SiC Schottky diodes where Ti is a common metal contact.
机译：碳化硅肖特基势垒二极管是用Ti肖特基触点制成的。使用磁控溅射沉积系统在28℃至900℃的不同温度下沉积接触。然后将二极管在真空中于500℃退火长达60小时。触点在200°C下沉积并退火60小时的二极管具有最佳的电流-电压特性，该特性包括1.13 eV的大势垒高度和1.04的理想因子。这些二极管在反向偏置电压为400 V时也具有6.6 x 10-$ ^ 8 $ A的非常低的泄漏电流。Ti / SiC触点的X射线衍射分析显示，TiC，Ti5Si3和Ti3SiC2的形成接口。具有在200℃沉积的接触的二极管的改进的性能可能与具有高功函数的反应产物的形成有关。这些改进可以显着提高4H-SiC肖特基二极管的性能，其中Ti是常见的金属触点。

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