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首页> 外文期刊>Physical Review X >Quantum Interference Controls the Electron Spin Dynamics in n -GaAs
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Quantum Interference Controls the Electron Spin Dynamics in n -GaAs

机译：量子干扰控制n-gaas中的电子自旋动态

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Manifestations of quantum interference effects in macroscopic objects are rare. Weak localization is one of the few examples of such effects showing up in the electron transport through solid state. Here, we show that weak localization becomes prominent also in optical spectroscopy via detection of the electron spin dynamics. In particular, we find that weak localization controls the free electron spin relaxation in semiconductors at low temperatures and weak magnetic fields by slowing it down by almost a factor of two in n -doped GaAs in the metallic phase. The weak localization effect on the spin relaxation is suppressed by moderate magnetic fields of approximately 1?T, which destroy the interference of electron trajectories, and by increasing the temperature. The weak localization suppression causes an anomalous decrease of the longitudinal electron spin relaxation time T 1 with magnetic field, in stark contrast with the well-known magnetic-field-induced increase in T 1 . This is consistent with transport measurements, which show the same variation of resistivity with magnetic field. Our discovery opens up a vast playground to explore quantum magnetotransport effects optically in the spin dynamics.
机译：宏观物体中量子干扰效应的表现罕见。弱定位是通过固态在电子传输中出现的这种效果的少数例子之一。这里，我们表明，通过检测电子自旋动态，弱定位也突出了光谱。特别是，我们发现弱定位通过在金属相中在N掺杂的GaAs中的几乎倍数下降，在低温和弱磁场下控制半导体中的自由电子旋弛弛豫。通过约1℃的中等磁场抑制对旋转弛豫的弱定位效应，其破坏了电子轨迹的干扰，并通过增加温度。弱定位抑制导致纵向电子自旋弛豫时间T 1与磁场的异常降低，与众所周知的磁场诱导的T 1增加。这与传输测量一致，其示出了与磁场的电阻率相同的变化。我们的发现开辟了广阔的游乐场，可以在旋转动态中光学地探索量子磁通量运动效果。

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