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Effects of Gate-Induced Electric Fields on Semiconductor Majorana Nanowires

机译：栅极诱导电场对半导体Majorana纳米线的影响

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We study the effect of gate-induced electric fields on the properties of semiconductor-superconductor hybrid nanowires which represent a promising platform for realizing topological superconductivity and Majorana zero modes. Using a self-consistent Schr?dinger-Poisson approach that describes the semiconductor and the superconductor on equal footing, we are able to access the strong tunneling regime and identify the impact of an applied gate voltage on the coupling between semiconductor and superconductor. We discuss how physical parameters such as the induced superconducting gap and Landé g factor in the semiconductor are modified by redistributing the density of states across the interface upon application of an external gate voltage. Finally, we map out the topological phase diagram as a function of magnetic field and gate voltage for InAs/Al nanowires.
机译：我们研究了栅极诱导的电场对半导体超导体混合纳米线的性能的影响，其代表了实现拓扑超导性和Majorana零模式的有希望平台的有前途的平台。使用自我一致的SCHR？Dinger-Poisson方法，该方法描述了半导体和超导体上的超导体，我们能够进入强隧道调节，并识别所施加的栅极电压对半导体和超导体之间的耦合的影响。我们讨论如何通过在施加外部栅极电压时通过在界面上重新分配状态的密度来修改诸如诱导的超导间隙和LandéG因子的物理参数。最后，我们将拓扑相图映射为INAS / Al纳米线的磁场和栅极电压的函数。

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