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Impact Ionization in Semiconductors: Effects of High Electric Fields and HighScattering Rates

机译：半导体中的撞击电离：高电场和高散射率的影响

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We have continued our work on impact ionization including collisional broadeningand the intracollisional field effect. We have started to investigate the possibility of Monte Carlo simulations that use the pseudopotential form-factors as sole input to compute both band structure and phonon scattering rate and we have obtained preliminary results. With regard to quantum transport, we have continued our work on phonon scattering in mesoscopic systems and we have obtained first numerical results on the electron-electron interaction in simple nanostructures.

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作者
Bude, J.; Hess, K.; Iafrate, G. J.;
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年度 1992
页码
总页数 8
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Ionization; Electric fields; Electrons; Impact; Interactions; Phonons; Scattering; Semiconductors; Simulation; Transport; Monte carlo method; Reprints;

机译：电离;电场;电子;撞击;相互作用;声子;散射;半导体;模拟;运输;蒙特卡罗方法;重印;

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专利

1. Impact ionization and high-field effects in wide-band-gap semiconductors [J] . Reigrotzki M., Madureira JR., Kuligk A., Physica, B. Condensed Matter . 2002,第1a4期

机译：宽带隙半导体中的碰撞电离和高场效应
2. Impact ionization and high field effects in wide band gap semiconductors [J] . M. Reigrotzki, J. R. Madureira, A. Kuligk, International Journal of High Speed Electronics and Systems: Devices, Integrated Circuits and Systems, Optical and Quantum Electronics . 2001,第2期

机译：宽带隙半导体中的碰撞电离和高场效应
3. Influence of oblique magnetic field on the impact ionization rate of charge carriers in semiconductors [J] . Mukherjee Prajukta, Chatterjee Debjyoti, Acharyya Aritra Journal of Computational Electronics . 2017,第3期

机译：倾斜磁场对半导体中载流子的碰撞电离率的影响
4. 70-nm Impact-Ionization Metal-Oxide-Semiconductor (I-MOS) Devices Integrated with Tunneling Field-Effect Transistors (TFETs) [C] . Woo Young Choi, Jae Young Song, Jong Duk Lee, International Electron Devices Meeting . 2005

机译：与隧道场效应晶体管（TFET）集成的70-nm碰撞电离金属 - 氧化物半导体（I-MOS）器件
5. Total ionizing dose effects in power vertical double-diffused metal-oxide-semiconductor field effect transistors. [D] . Park, Mun-Soo. 2004

机译：功率垂直双扩散金属氧化物半导体场效应晶体管中的总电离剂量效应。
6. Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors [O] . Dongmin Keum, Hyungtak Kim 2019

机译：质子辐照对常断型AlGaN / GaN栅嵌入式金属-绝缘体-半导体异质结构场效应晶体管随时间变化的介电击穿特性的影响
7. Review: Tunnel ionization of deep impurities in semiconductors induced by terahertz electric fields [O] . Ganichev Sergey 1999

机译：综述：太赫兹电场在半导体中深层杂质的隧道电离
8. ELECTRON-ENERGY DISTRIBUTIONS AND IONIZATION RATES IN HYDROGEN WITH CROSSED ELECTRIC AND STRONG MAGNETIC FIELDS [R] . Gary A. Pearson, Wulf B. Kunkel 1962

机译：具有交叉电场和强磁场的氢的电子能量分布和电离速率

Impact Ionization in Semiconductors: Effects of High Electric Fields and HighScattering Rates

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