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Thermal effect of annealing-temperature on solution-processed high-k ZrO2 dielectrics

机译：退火温度对溶液加工高k ZrO2电介质的热效应

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摘要

In this paper, a solution-processed zirconium oxide (ZrO _(2) ) dielectric was deposited by spin coating with varying pre-annealing temperatures and post-annealing temperatures. The thermal effect of the pre-annealing and post-annealing process on the structural and electrical properties of ZrO _(2) films was investigated. The result shows that the pre-annealing process had a significant impact on the relative porosity and internal stress of ZrO _(2) film. A pre-annealing process with a low temperature could not effectively remove the residual solvent, while a high pre-annealing temperature would lead to large internal stress. As for post-annealing temperature, it was found that the post-annealing process can not only reduce internal defects of the ZrO _(2) dielectric, but also optimize the interface between the semiconductor and dielectric by lowering the surface defects of the ZrO _(2) film. Finally, the TFT with a pre-annealing temperature of 200 °C and post-annealing temperature of 400 °C showed optimized performance, with a mobility of 16.34 cm ~(2) (V s) ~(?1) , an I _(on) / I _(off) of 2.08 × 10 ~(6) , and a subthreshold swing (SS) of 0.17 V dec ~(?1) .
机译：本文通过旋涂沉积溶液处理的氧化锆（ZrO _（2））电介质，其具有不同的预退火温度和后退火温度。研究了预退火和退火过程对ZrO _（2）膜的结构和电性能的热效应。结果表明，预退火过程对ZrO _（2）膜的相对孔隙率和内应力产生显着影响。具有低温的预退火过程无法有效去除残留溶剂，而高预退火温度会导致大的内应力。对于退火后温度，发现后退火过程不仅可以减少Zro _（2）电介质的内部缺陷，还可以通过降低Zro _的表面缺陷来优化半导体和电介质之间的界面（2）薄膜。最后，TFT具有200°C的预退火温度和400°C后退火温度显示出优化的性能，迁移率为16.34cm〜（2）（V S）〜（？1），I _ （ON）/ I _（关闭）2.08×10〜（6），以及0.17 V DEC〜（？1）的亚阈值摆动（SS）。

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