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Methods to improve electrical performance of ZrO2 based high-K dielectric materials for DRAM applications
Methods to improve electrical performance of ZrO2 based high-K dielectric materials for DRAM applications
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机译：改善DRAM应用中基于ZrO2的高K电介质材料的电性能的方法
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摘要
A method for reducing the leakage current in DRAM MIM capacitors comprises forming a multi-layer dielectric stack from an amorphous highly doped material, an amorphous high band gap material, and a lightly-doped or non-doped material. The highly doped material will remain amorphous (30% crystalline) after an anneal step. The high band gap material will remain amorphous (30% crystalline) after an anneal step. The lightly-doped or non-doped material will become crystalline (≧30% crystalline) after an anneal step. The high band gap material is formed between the amorphous highly doped material and the lightly or non-doped material and provides an intermediate barrier to conduction through the multi-layer dielectric stack.
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