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Methods to Improve Electrical Performance of ZrO2 Based High-K Dielectric Materials for DRAM Applications
Methods to Improve Electrical Performance of ZrO2 Based High-K Dielectric Materials for DRAM Applications
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机译:改善DRAM应用中基于ZrO2的高K介电材料的电性能的方法
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摘要
A method for reducing the leakage current in DRAM MIM capacitors comprises forming a multi-layer dielectric stack from an amorphous highly doped material, an amorphous high band gap material, and a lightly-doped or non-doped material. The highly doped material will remain amorphous (30% crystalline) after an anneal step. The high band gap material will remain amorphous (30% crystalline) after an anneal step. The lightly-doped or non-doped material will become crystalline (≧30% crystalline) after an anneal step. The high band gap material is formed between the amorphous highly doped material and the lightly or non-doped material and provides an intermediate barrier to conduction through the multi-layer dielectric stack.
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