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Disorder-enhanced spin polarization of the Zn1?xCoxO1?v concentrated magnetic semiconductor

机译：Zn1 XcoxO1αv浓缩磁半导体的混乱增强的自旋极化

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Amorphous concentrated magnetic semiconductor Zn _(0.32) Co _(0.68) O _(1?v) (v refers to oxygen vacancies) thin film was investigated by magnetic and electrical transport measurements as well as Andreev reflection spectroscopy. At a low temperature range, the electrons in the Zn _(0.32) Co _(0.68) O _(1?v) are strongly localized, and electrical transport obeys the Efros variable range hopping law. Spin polarization was measured by Andreev reflection spectroscopy. As high as 64 ± 5% of spin polarization was attained through fitting of the modified Blonder–Tinkham–Klapwijk (BTK) theory. This enhanced spin polarization of Zn _(0.32) Co _(0.68) O _(1?v) likely relates with the structure disorder and high concentration of magnetic cobalt ions, which lead to a spin imbalance impurity band in the tail of the conduction band. Considering room temperature ferromagnetism and high spin polarization, this material appears to be promising for spintronics device applications.
机译：通过磁电和电气传输测量以及AndreeV反射光谱研究，对非晶浓缩磁半导体Zn _（0.32）Co _（0.68）O _（0.68）O _（0.68）O _（0.68）O _（1≤V）（V是指氧空位）薄膜。在低温范围内，Zn _（0.32）CO _（0.68）O _（0.68）O _（1≤V）中的电子是强烈的本地化的，电气传输obeys efros可变范围跳跃法。通过AndreeV反射光谱测量自旋极化。通过修改的Blonder-Tinkham-Klapwijk（BTK）理论，实现高达64±5％的自旋极化。这种增强的Zn _（0.32）CO _（0.68）O _（1→V）的自旋极化可能与结构障碍和高浓度的磁性钴离子相关，这导致导通的旋转不平衡杂质带乐队。考虑室温铁磁性和高自旋极化，这种材料似乎对闪光灯设备应用有望。

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