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首页> 外文期刊>International Journal of Electrochemical Science >Fabrication and Photoelectrochemical Performances of BiFeO3?Thin Film Photoelectrodes: Effect of Annealing Temperature
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Fabrication and Photoelectrochemical Performances of BiFeO3?Thin Film Photoelectrodes: Effect of Annealing Temperature

机译：BIFEO3薄膜光电子的制造和光电化学性能：退火温度的影响

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摘要

BiFeO3 (BFO), as a ferroelectric material, has been considered as a new type of photoelectrode material in recent years and has been attracting extensive attention in many fields. In this work, pure phase BFO thin film photoelectrodes were successfully prepared by one-step sol-gel spin coating method, and the influence of annealing temperature on the structure and photoelectrochemical properties of BFO thin film photoelectrodes was also investigated. The XRD patterns and SEM images reveal that pure phase BFO with rhombohedral structure could be obtained under different annealing temperatures, and the BFO-550 thin film prepared at an annealing temperature of 550 °C had a more uniform and smooth thin film compared to those thin films prepared at an annealing temperature of 500 °C, 600 °C, or 650 °C (namely BFO-500, BFO-600, BFO-650). The transient photocurrent response spectra and linear sweep voltammetry (LSV) curves show that all the prepared BFO thin films exhibited good photoelectrochemical response characteristics, and the BFO-550 thin film photoelectrode possessed a much higher photoelectrochemical activity than the other BFO thin film photoelectrodes. The MottSchottky (M-S) curves, electrochemical impedance spectra (EIS) and photoluminescence (PL) spectra further indicate that the BFO-550 thin film photoelectrode had a higher carrier concentration, better photogenerated carrier separation efficiency and lower photo-generated carrier recombination rate than the other BFO thin film samples, thus leading to the improved photoelectrochemical activity of BFO550. Moreover, the BFO-550 thin film photoelectrode could resist photocorrosion and exhibit relatively good photoelectrochemical stability, which should be beneficial to its photoelectrochemical applications.
机译：BIFEO3（BFO）作为铁电材料，近年来被认为是一种新型的光电电极材料，并且在许多领域中一直吸引了广泛的关注。在这项工作中，通过一步溶胶 - 凝胶旋涂法成功制备了纯相BFO薄膜光电子，并研究了退火温度对BFO薄膜光电子的结构和光电化学性质的影响。 XRD图案和SEM图像显示，在不同的退火温度下，可以获得具有菱形结构的纯相BFO，与550℃的退火温度下制备的BFO-550薄膜具有更均匀和光滑的薄膜，与那些薄在500℃，600℃或650℃的退火温度下制备的薄膜（即BFO-500，BFO-600，BFO-650）。瞬态光电流响应光谱和线性扫描伏安法（LSV）曲线表明，所有制备的BFO薄膜都表现出良好的光电化学响应特性，并且BFO-550薄膜光电子具有比另一个BFO薄膜光电子更高的光电化学活性。 MottsChottky（MS）曲线，电化学阻抗谱（EIS）和光致发光（PL）光谱进一步表明BFO-550薄膜光电极具有更高的载体浓度，更好的光生载流子分离效率和低于光产生的载体复合率其他BFO薄膜样品，从而导致BFO550的改善的光电化学活性。此外，BFO-550薄膜光电极可以抵抗光腐蚀并表现出相对良好的光电化学稳定性，这应该有利于其光电化学应用。

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