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Theoretical simulation of the effect of temperature of multi-junction solar cells (PIN/ InGaN)

机译：多结太阳能电池温度效果的理论模拟（PIN / INGAN）

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In this study, we performed a numerical theoretical simulation of single-junction and dualjunction solar cells based on InGaN. This simulation calculates the electrical parameters, characteristics of each of the studied cells, such as absorption, open-circuit voltage (Vco), collection efficiency, short circuit density (Jsc), and form factor FF. We have optimized the cells top PIN (In0.62Ga0.38N) and bottom PIN (In0.81Ga0.19N), and a dual-junction cell. The conversation efficiency of the single junction PIN cells exceeds 23%, while it is 38% for the dual-junction cell. The temperature dependencies of single junction and dual-junction solar cells have been studied at temperatures ranging from 300?K to 450?K. The variation of the electrical parameters of each cell was simulated with increasing temperature and the simulation result was detailed in this study. This study was done under standard conditions (AM1.5, 1000mW/cm2 ) and the simulation was performed on an ANOC calculation code (the latter is available as an application on android devices).
机译：在这项研究中，我们基于IngaN进行了单结和双通链太阳能电池的数值理论模拟。该模拟计算了所研究的电池的电气参数，特性，例如吸收，开路电压（VCO），收集效率，短路密度（JSC）和外形FF。我们已经优化了细胞顶销（In0.62Ga0.38n）和底销（In0.81ga0.19n）和双结电池。单结销电池的谈话效率超过23％，而双结电池为38％。已经在从300Ωk到450？K的温度下研究了单结和双结太阳能电池的温度依赖性。随着温度的增加，模拟了每种细胞的电参数的变化，并且在该研究中详述了模拟结果。本研究是在标准条件下（AM1.5，1000MW / cm2）完成的，并且在ANOC计算代码上执行模拟（后者作为Android设备上的应用程序）。

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