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Development of Pulsed TEM Equipped with Nitride Semiconductor Photocathode for High-Speed Observation and Material Nanofabrication

机译：脉冲TEM的研制配备有氮化物半导体光电处理的高速观察和材料纳米制作

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摘要

The development of pulsed electron sources is applied to electron microscopes or electron beam lithography and is effective in expanding the functions of such devices. The laser photocathode can generate short pulsed electrons with high emittance, and the emittance can be increased by changing the cathode substrate from a metal to compound semiconductor. Among the substrates, nitride-based semiconductors with a negative electron affinity (NEA) have good advantages in terms of vacuum environment and cathode lifetime. In the present study, we report the development of a photocathode electron gun that utilizes photoelectron emission from a NEA-InGaN substrate by pulsed laser excitation, and the purpose is to apply it to material nanofabrication and high-speed observation using a pulsed transmission electron microscope (TEM) equipped with it.
机译：脉冲电子源的开发应用于电子显微镜或电子束光刻，并且有效地扩展这种装置的功能。 激光光电阴极可以产生具有高发射率的短脉冲电子，并且可以通过将阴极基板从金属改变为化合物半导体来增加粘合率。 在基板中，在真空环境和阴极寿命方面具有负电子亲和力（NEA）的氮化物基半导体具有良好的优点。 在本研究中，我们报道了利用脉冲激光激发利用来自Nea-IngaN衬底的光电和光电发射的光电阴极电子枪的开发，并且使用脉冲透射电子显微镜将其施加到材料纳米制造和高速观察中 （TEM）配备它。

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