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首页> 外文期刊>IEEE Electron Device Letters >Method to Extract Interface and Bulk Trap Separately Over the Full Sub-Gap Range in Amorphous InGaZnO Thin-Film Transistors by Using Various Channel Thicknesses
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Method to Extract Interface and Bulk Trap Separately Over the Full Sub-Gap Range in Amorphous InGaZnO Thin-Film Transistors by Using Various Channel Thicknesses

机译：利用不同的通道厚度分别提取非晶InGaZnO薄膜晶体管中整个子间隙范围内的界面和体陷阱的方法

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摘要

We propose an experimental method to decompose the interface (insulator/channel) trap density (Dit) and sub-gap density-of-state in the entire defect (gtot) of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). This method involving various active layers of different thicknesses is used for determining the origin of defects and for process optimization. These results can be used to determine clearly the contributions to the origin of the defect. Oxygen-related and deep states near the conduction band minimum (EC) were strongly affected by the interface region. Tail states near EC, on the other hand, were strongly influenced by the active layer. The proposed method provides physical insight and key guidelines for optimizing the performance of a-IGZO TFTs.
机译：我们提出了一种实验方法来分解非晶InGaZnO（a-IGZO）薄膜晶体管（TFT）的整个缺陷（gtot）中的界面（绝缘体/沟道）陷阱密度（Dit）和子间隙状态密度。涉及具有不同厚度的各种有源层的该方法用于确定缺陷的来源和用于工艺优化。这些结果可用于清楚地确定对缺陷来源的贡献。靠近导带最小值（EC）的与氧有关的深层状态受界面区域的强烈影响。另一方面，EC附近的尾部状态受有源层的强烈影响。所提出的方法为优化a-IGZO TFT的性能提供了物理见解和关键指导。

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