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首页> 外文期刊>IEEE Electron Device Letters >P-Channel Tri-Gate FinFETs Featuring Ni1 − yPty SiGe Source/Drain Contacts for Enhanced Drive Current Performance
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P-Channel Tri-Gate FinFETs Featuring Ni1 − yPty SiGe Source/Drain Contacts for Enhanced Drive Current Performance

机译：具有Ni1-yPty SiGe源极/漏极触点的P沟道三栅极FinFET，可增强驱动电流性能

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摘要

We report the integration of nickel platinum germanosilicide $(hbox{Ni}_{1 - y}hbox{Pt}_{y}hbox{SiGe})$ contacts in tri-gate FinFETs with silicon germanium source/drain stressors for enhanced drive current performance. The structural and electrical properties of $hbox{Ni}_{1 - y}hbox{Pt}_{y}hbox{SiGe}$ contacts with platinum (Pt) concentrations up to 20 atomic % (at. %) were explored for FinFET integration. Our results show that $hbox{Ni}_{1 - y}hbox{Pt}_{y}hbox{SiGe}$ incorporated with 10 at. % Pt shows superior morphological stability, a suitably low sheet resistivity and the lowest Schottky hole barrier height $(Phi_{B}^{P})$ among the $hbox{Ni}_{1 - y}hbox{Pt}_{y}hbox{SiGe}$ candidates evaluated. The low $Phi_{B}^{P}$ (0.309 eV) provides a 15% reduction in series resistance $R_{rm series}$. With a superior morphological stability and reduced $R_{rm series}$, FinFETs integrated with $hbox{Ni}_{0.90}hbox{Pt}_{0.10}hbox{SiGe}$ contacts exhibit an overall 18% improvement in drive current compared to FinFETs with NiSiGe contacts.
机译：我们报告了三栅极FinFET中集成了硅锗源/漏应力源的镍铂锗硅化硅$（hbox {Ni} _ {1-y} hbox {Pt} _ {y} hbox {SiGe}）$触点的集成目前的表现。探索了$ hbox {Ni} _ {1-y} hbox {Pt} _ {y} hbox {SiGe} $与最高20原子％（原子％）的铂（Pt）接触的结构和电学性质。 FinFET集成。我们的结果显示$ hbox {Ni} _ {1-y} hbox {Pt} _ {y} hbox {SiGe} $与10 at合并。 Pt％在$ hbox {Ni} _ {1-y} hbox {Pt} _ {中显示出优异的形态稳定性，较低的薄层电阻率和最低的肖特基空穴势垒高度$（Phi_ {B} ^ {P}）$评估了y} hbox {SiGe} $个候选人。低的$ Phi_ {B} ^ {P} $（0.309 eV）可将串联电阻$ R_ {rm series} $降低15％。具有出色的形态稳定性并减少了$ R_ {rm系列} $，与$ hbox {Ni} _ {0.90} hbox {Pt} _ {0.10} hbox {SiGe} $集成的FinFET的驱动电流总体提高了18％与具有NiSiGe触点的FinFET相比。

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